STB30NM60N Tech Spezifikatioune
STMicroelectronics - STB30NM60N technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STB30NM60N
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | STMicroelectronics | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | D2PAK | |
Serie | MDmesh™ II | |
Rds On (Max) @ Id, Vgs | 130mOhm @ 12.5A, 10V | |
Power Dissipation (Max) | 190W (Tc) | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 2700 pF @ 50 V | |
Gate Charge (Qg) (Max) @ Vgs | 91 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 600 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 25A (Tc) | |
Basis Produktnummer | STB30N |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STB30NM60N.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | STB30NM60N | STB33N65M2 | STB33N60DM2 | STB30NF20 |
Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 5V @ 250µA | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 91 nC @ 10 V | 41.5 nC @ 10 V | 43 nC @ 10 V | 38 nC @ 10 V |
Operatioun Temperatur | 150°C (TJ) | 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 130mOhm @ 12.5A, 10V | 140mOhm @ 12A, 10V | 130mOhm @ 12A, 10V | 75mOhm @ 15A, 10V |
Serie | MDmesh™ II | MDmesh™ M2 | MDmesh™ DM2 | STripFET™ |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Supplier Device Package | D2PAK | D²PAK (TO-263) | D²PAK (TO-263) | D2PAK |
Power Dissipation (Max) | 190W (Tc) | 190W (Tc) | 190W (Tc) | 125W (Tc) |
Entworf fir Source Voltage (Vdss) | 600 V | 650 V | 600 V | 200 V |
Basis Produktnummer | STB30N | STB33 | STB33 | STB30 |
FET Feature | - | - | - | - |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 25A (Tc) | 24A (Tc) | 24A (Tc) | 30A (Tc) |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Input Capacitance (Ciss) (Max) @ Vds | 2700 pF @ 50 V | 1790 pF @ 100 V | 1870 pF @ 100 V | 1597 pF @ 25 V |
Vgs (Max) | ±30V | ±25V | ±25V | ±20V |
Eroflueden STB30NM60N PDF DataDhusts an STMicroelectronics Dokumentatioun fir STB30NM60N - STMicroelectronics.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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