STB26NM60N Tech Spezifikatioune
STMicroelectronics - STB26NM60N technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STB26NM60N
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | STMicroelectronics | |
| Vgs (th) (Max) @ Id | 4V @ 250µA | |
| Vgs (Max) | ±30V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | D²PAK (TO-263) | |
| Serie | MDmesh™ II | |
| Rds On (Max) @ Id, Vgs | 165mOhm @ 10A, 10V | |
| Power Dissipation (Max) | 140W (Tc) | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 50 V | |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 600 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 20A (Tc) | |
| Basis Produktnummer | STB26 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STB26NM60N.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | STB26NM60N | STB27NM60ND | STB26N60M2 | STB25N80K5 |
| Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 20A (Tc) | 21A (Tc) | 20A (Tc) | 19.5A (Tc) |
| Vgs (Max) | ±30V | ±25V | ±25V | ±30V |
| Entworf fir Source Voltage (Vdss) | 600 V | 600 V | 600 V | 800 V |
| Serie | MDmesh™ II | Automotive, AEC-Q101, FDmesh™ II | MDmesh™ M2 | SuperMESH5™ |
| Supplier Device Package | D²PAK (TO-263) | D²PAK (TO-263) | D²PAK | D²PAK (TO-263) |
| Power Dissipation (Max) | 140W (Tc) | 160W (Tc) | 169W (Tc) | 250W (Tc) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V | 80 nC @ 10 V | 34 nC @ 10 V | 40 nC @ 10 V |
| Rds On (Max) @ Id, Vgs | 165mOhm @ 10A, 10V | 160mOhm @ 10.5A, 10V | 165mOhm @ 10A, 10V | 260mOhm @ 19.5A, 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 50 V | 2400 pF @ 50 V | 1360 pF @ 100 V | 1600 pF @ 100 V |
| Basis Produktnummer | STB26 | STB27N | STB26 | STB25 |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| FET Feature | - | - | - | - |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operatioun Temperatur | 150°C (TJ) | 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Vgs (th) (Max) @ Id | 4V @ 250µA | 5V @ 250µA | 4V @ 250µA | 5V @ 100µA |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Eroflueden STB26NM60N PDF DataDhusts an STMicroelectronics Dokumentatioun fir STB26NM60N - STMicroelectronics.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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