STB21NM60N Tech Spezifikatioune
STMicroelectronics - STB21NM60N technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STB21NM60N
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | STMicroelectronics | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±25V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | D2PAK | |
Serie | MDmesh™ | |
Rds On (Max) @ Id, Vgs | 220mOhm @ 8.5A, 10V | |
Power Dissipation (Max) | 140W (Tc) | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 50 V | |
Gate Charge (Qg) (Max) @ Vgs | 66 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 600 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 17A (Tc) | |
Basis Produktnummer | STB21N |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STB21NM60N.
Produktiounsattriff | ||||
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Part Number | STB21NM60N | STB21NM60N-1 | STB22N60DM6 | STB21NM60ND |
Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Entworf fir Source Voltage (Vdss) | 600 V | 600 V | 600 V | 600 V |
Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 50 V | 1900 pF @ 50 V | 800 pF @ 100 V | 1800 pF @ 50 V |
Mounting Type | Surface Mount | Through Hole | Surface Mount | Surface Mount |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Power Dissipation (Max) | 140W (Tc) | 140W (Tc) | 130W (Tc) | 140W (Tc) |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4.75V @ 250µA | 5V @ 250µA |
Rds On (Max) @ Id, Vgs | 220mOhm @ 8.5A, 10V | 220mOhm @ 8.5A, 10V | 240mOhm @ 7.5A, 10V | 220mOhm @ 8.5A, 10V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 17A (Tc) | 17A (Tc) | 15A (Tc) | 17A (Tc) |
Gate Charge (Qg) (Max) @ Vgs | 66 nC @ 10 V | 66 nC @ 10 V | 20.6 nC @ 10 V | 60 nC @ 10 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Basis Produktnummer | STB21N | STB21N | STB22 | STB21N |
Supplier Device Package | D2PAK | I2PAK | D²PAK (TO-263) | D2PAK |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Serie | MDmesh™ | MDmesh™ | MDmesh™ M6 | FDmesh™ II |
Vgs (Max) | ±25V | ±25V | ±25V | ±25V |
FET Feature | - | - | - | - |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Operatioun Temperatur | 150°C (TJ) | 150°C (TJ) | -55°C ~ 150°C (TJ) | 150°C (TJ) |
Package protegéieren | Tape & Reel (TR) | Tube | Tape & Reel (TR) | Tape & Reel (TR) |
Eroflueden STB21NM60N PDF DataDhusts an STMicroelectronics Dokumentatioun fir STB21NM60N - STMicroelectronics.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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