STB160N75F3 Tech Spezifikatioune
STMicroelectronics - STB160N75F3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - STB160N75F3
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | STMicroelectronics | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | D2PAK | |
Serie | STripFET™ | |
Rds On (Max) @ Id, Vgs | 4mOhm @ 60A, 10V | |
Power Dissipation (Max) | 330W (Tc) | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 6750 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 85 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 75 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 120A (Tc) | |
Basis Produktnummer | STB160 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics STB160N75F3.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | STB160N75F3 | STB15NM65N | STB15N80K5 | STB15N65M5 |
Hiersteller | STMicroelectronics | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Vgs (Max) | ±20V | ±25V | ±30V | ±25V |
Entworf fir Source Voltage (Vdss) | 75 V | 650 V | 800 V | 650 V |
Power Dissipation (Max) | 330W (Tc) | 150W (Tc) | 190W (Tc) | 85W (Tc) |
Rds On (Max) @ Id, Vgs | 4mOhm @ 60A, 10V | 270mOhm @ 7.75A, 10V | 375mOhm @ 7A, 10V | 340mOhm @ 5.5A, 10V |
FET Feature | - | - | - | - |
Serie | STripFET™ | MDmesh™ II | SuperMESH5™ | MDmesh™ V |
Basis Produktnummer | STB160 | STB15N | STB15 | STB15N |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Gate Charge (Qg) (Max) @ Vgs | 85 nC @ 10 V | 55 nC @ 10 V | 32 nC @ 10 V | 22 nC @ 10 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 120A (Tc) | 12A (Tc) | 14A (Tc) | 11A (Tc) |
Input Capacitance (Ciss) (Max) @ Vds | 6750 pF @ 25 V | 1900 pF @ 50 V | 1100 pF @ 100 V | 810 pF @ 100 V |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | 150°C (TJ) |
Supplier Device Package | D2PAK | D2PAK | D²PAK (TO-263) | D²PAK (TO-263) |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 5V @ 100µA | 5V @ 250µA |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Eroflueden STB160N75F3 PDF DataDhusts an STMicroelectronics Dokumentatioun fir STB160N75F3 - STMicroelectronics.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.