BYV541V-200 Tech Spezifikatioune
STMicroelectronics - BYV541V-200 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu STMicroelectronics - BYV541V-200
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | STMicroelectronics | |
| Voltage - Viru (Vf) (Max) @ Wann | 850 mV @ 50 A | |
| Voltage - DC Reverse (Vr) (Max) | 200 V | |
| Technologie | Standard | |
| Supplier Device Package | ISOTOP® | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Serie | - | |
| Reverse Recovery Time (trr) | 60 ns |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | ISOTOP | |
| Package protegéieren | Tube | |
| Operatiounstemperatur - Junction | 150°C (Max) | |
| Mounting Type | Chassis Mount | |
| Diode Configuration | 2 Independent | |
| Aktuell - Reverse Leakage @ Vr | 50 µA @ 200 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) (pro Diode) | 50A | |
| Basis Produktnummer | BYV541 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu STMicroelectronics BYV541V-200.
| Produktiounsattriff |  |
 |
 |
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|---|---|---|---|---|
| Part Number | BYV541V-200 | BYV430K-300PQ | BYV52-200 | BYV54V-200 |
| Hiersteller | STMicroelectronics | WeEn Semiconductors | STMicroelectronics | STMicroelectronics |
| Mounting Type | Chassis Mount | Through Hole | Through Hole | Chassis Mount |
| Package / Case | ISOTOP | TO-3P-3, SC-65-3 | TO-218-3 | ISOTOP |
| Package protegéieren | Tube | Tube | Tube | Tube |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Serie | - | - | - | - |
| Basis Produktnummer | BYV541 | BYV430 | BYV52 | BYV54V |
| Operatiounstemperatur - Junction | 150°C (Max) | 175°C (Max) | -40°C ~ 150°C | - |
| Supplier Device Package | ISOTOP® | TO-3P | SOT-93 | ISOTOP® |
| Aktuell - Reverse Leakage @ Vr | 50 µA @ 200 V | 10 µA @ 300 V | 25 µA @ 200 V | 50 µA @ 200 V |
| Technologie | Standard | Standard | Standard | Standard |
| Voltage - Viru (Vf) (Max) @ Wann | 850 mV @ 50 A | 1.25 V @ 30 A | 850 mV @ 20 A | 850 mV @ 50 A |
| Diode Configuration | 2 Independent | 1 Pair Common Cathode | 1 Pair Common Cathode | 2 Independent |
| Voltage - DC Reverse (Vr) (Max) | 200 V | 300 V | 200 V | 200 V |
| Aktuell - duerchschnëttlech rektifizéiert (Io) (pro Diode) | 50A | 30A | 30A | 50A |
| Reverse Recovery Time (trr) | 60 ns | 55 ns | 50 ns | 60 ns |
Eroflueden BYV541V-200 PDF DataDhusts an STMicroelectronics Dokumentatioun fir BYV541V-200 - STMicroelectronics.
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BYV44-500NXP/WEENBYV541V100STMicroelectronicsIGBT ModuleBYV541V200STMicroelectronicsIGBT ModuleBYV430K-300PQWeEn SemiconductorsDIODE ARRAY GP 300V 30A TO3PBYV54PV200STMicroelectronicsIGBT ModuleBYV54V100STMicroelectronicsIGBT Module
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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