NP100P04PDG-E1-AY Tech Spezifikatioune
Renesas Electronics America Inc - NP100P04PDG-E1-AY technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Renesas Electronics America Inc - NP100P04PDG-E1-AY
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Renesas Electronics Corporation | |
Vgs (th) (Max) @ Id | 2.5V @ 1mA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-263 | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 3.5mOhm @ 50A, 10V | |
Power Dissipation (Max) | 1.8W (Ta), 200W (Tc) | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 15100 pF @ 10 V | |
Gate Charge (Qg) (Max) @ Vgs | 320 nC @ 10 V | |
FET Typ | P-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 40 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 100A (Tc) | |
Basis Produktnummer | NP100P04 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Renesas Electronics America Inc NP100P04PDG-E1-AY.
Produktiounsattriff | ||||
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Part Number | NP100P04PDG-E1-AY | NP100N04PUK-E1-AY | NP109N04PUK-E1-AY | NP100P06PDG-E1-AY |
Hiersteller | Renesas Electronics America Inc | Renesas Electronics America Inc | Renesas Electronics America Inc | Renesas Electronics America Inc |
Vgs (th) (Max) @ Id | 2.5V @ 1mA | - | 4V @ 250µA | 2.5V @ 1mA |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Supplier Device Package | TO-263 | TO-263 | TO-263 (D²Pak) | TO-263 |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
FET Typ | P-Channel | N-Channel | N-Channel | P-Channel |
FET Feature | - | - | - | - |
Input Capacitance (Ciss) (Max) @ Vds | 15100 pF @ 10 V | 7050 pF @ 25 V | 10800 pF @ 25 V | 15000 pF @ 10 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 100A (Tc) | 100A (Tc) | 110A (Tc) | 100A (Tc) |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 10V | 10V | 4.5V, 10V |
Operatioun Temperatur | 175°C (TJ) | 175°C (TJ) | 175°C (TJ) | 175°C (TJ) |
Entworf fir Source Voltage (Vdss) | 40 V | 40 V | 40 V | 60 V |
Serie | - | - | - | - |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Basis Produktnummer | NP100P04 | NP100N04 | NP109N04 | NP100P06 |
Gate Charge (Qg) (Max) @ Vgs | 320 nC @ 10 V | 120 nC @ 10 V | 189 nC @ 10 V | 300 nC @ 10 V |
Rds On (Max) @ Id, Vgs | 3.5mOhm @ 50A, 10V | 2.3mOhm @ 50A, 10V | 1.75mOhm @ 55A, 10V | 6mOhm @ 50A, 10V |
Power Dissipation (Max) | 1.8W (Ta), 200W (Tc) | 1.8W (Ta), 176W (Tc) | 1.8W (Ta), 250W (Tc) | 1.8W (Ta), 200W (Tc) |
Eroflueden NP100P04PDG-E1-AY PDF DataDhusts an Renesas Electronics America Inc Dokumentatioun fir NP100P04PDG-E1-AY - Renesas Electronics America Inc.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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