PSMN014-40YS,115 Tech Spezifikatioune
Nexperia USA Inc. - PSMN014-40YS,115 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Nexperia USA Inc. - PSMN014-40YS,115
Produktiounsattriff | Attributer Wäert | |
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Hiersteller | Nexperia | |
Vgs (th) (Max) @ Id | 4V @ 1mA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | LFPAK56, Power-SO8 | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 14mOhm @ 5A, 10V | |
Power Dissipation (Max) | 56W (Tc) | |
Package / Case | SC-100, SOT-669 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 702 pF @ 20 V | |
Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 40 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 46A (Tc) | |
Basis Produktnummer | PSMN014 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Nexperia USA Inc. PSMN014-40YS,115.
Produktiounsattriff | ||||
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Part Number | PSMN014-40YS,115 | PSMN013-30YLC,115 | PSMN015-100P,127 | PSMN013-60YLX |
Hiersteller | Nexperia USA Inc. | Nexperia USA Inc. | Nexperia USA Inc. | Nexperia USA Inc. |
Mounting Type | Surface Mount | Surface Mount | Through Hole | Surface Mount |
Package / Case | SC-100, SOT-669 | SC-100, SOT-669 | TO-220-3 | SC-100, SOT-669 |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 5V, 10V |
Supplier Device Package | LFPAK56, Power-SO8 | LFPAK56, Power-SO8 | TO-220AB | LFPAK56, Power-SO8 |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 46A (Tc) | 32A (Tc) | 75A (Tc) | 53A (Tc) |
Rds On (Max) @ Id, Vgs | 14mOhm @ 5A, 10V | 13.6mOhm @ 10A, 10V | 15mOhm @ 25A, 10V | 13mOhm @ 15A, 10V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Input Capacitance (Ciss) (Max) @ Vds | 702 pF @ 20 V | 521 pF @ 15 V | 4900 pF @ 25 V | 2603 pF @ 25 V |
Vgs (th) (Max) @ Id | 4V @ 1mA | 1.95V @ 1mA | 4V @ 1mA | 2.1V @ 1mA |
Basis Produktnummer | PSMN014 | PSMN013 | PSMN015 | PSMN013 |
Power Dissipation (Max) | 56W (Tc) | 26W (Tc) | 300W (Tc) | 95W (Tc) |
FET Feature | - | - | - | - |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Entworf fir Source Voltage (Vdss) | 40 V | 30 V | 100 V | 60 V |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Serie | - | - | TrenchMOS™ | - |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tube | Tape & Reel (TR) |
Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V | 8.3 nC @ 10 V | 90 nC @ 10 V | 33.2 nC @ 10 V |
Eroflueden PSMN014-40YS,115 PDF DataDhusts an Nexperia USA Inc. Dokumentatioun fir PSMN014-40YS,115 - Nexperia USA Inc..
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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