APTGT150A170D1G Tech Spezifikatioune
Microsemi Corporation - APTGT150A170D1G technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Microsemi Corporation - APTGT150A170D1G
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Microsemi | |
| Voltage - Collector Emitter Breakdown (Max) | 1700 V | |
| Vce (on) (Max) @ Vge, Ic | 2.4V @ 15V, 150A | |
| Supplier Device Package | D1 | |
| Serie | - | |
| Power - Max | 780 W | |
| Package / Case | D1 | |
| Package protegéieren | Bulk | |
| Operatioun Temperatur | - |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| NTC Thermistor | No | |
| Mounting Type | Chassis Mount | |
| Input Capacitance (Cies) @ Vce | 13 nF @ 25 V | |
| Input | Standard | |
| IGBT Type | Trench Field Stop | |
| Aktuell - Kollektorat Cutoff (Max) | 4 mA | |
| Aktuell - Sammler (Ic) (Max) | 280 A | |
| Konfiguratioun | Half Bridge |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Microsemi Corporation APTGT150A170D1G.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | APTGT150A170D1G | APTGT100SK170D1G | APTGT200A120D3G | APTGT100A120D1G |
| Hiersteller | Microsemi Corporation | Microsemi Corporation | Microchip Technology | Microsemi Corporation |
| Mounting Type | Chassis Mount | Chassis Mount | Chassis Mount | Chassis Mount |
| Package / Case | D1 | D1 | D-3 Module | D1 |
| Input Capacitance (Cies) @ Vce | 13 nF @ 25 V | 8.5 nF @ 25 V | 14 nF @ 25 V | 7 nF @ 25 V |
| Serie | - | - | - | - |
| Package protegéieren | Bulk | Bulk | Bulk | Bulk |
| Supplier Device Package | D1 | D1 | D3 | D1 |
| Vce (on) (Max) @ Vge, Ic | 2.4V @ 15V, 150A | 2.4V @ 15V, 100A | 2.1V @ 15V, 200A | 2.1V @ 15V, 100A |
| Aktuell - Sammler (Ic) (Max) | 280 A | 200 A | 300 A | 150 A |
| NTC Thermistor | No | No | No | No |
| Input | Standard | Standard | Standard | Standard |
| Voltage - Collector Emitter Breakdown (Max) | 1700 V | 1700 V | 1200 V | 1200 V |
| Aktuell - Kollektorat Cutoff (Max) | 4 mA | 3 mA | 6 mA | 3 mA |
| Konfiguratioun | Half Bridge | Single | Half Bridge | Half Bridge |
| IGBT Type | Trench Field Stop | Trench Field Stop | Trench Field Stop | Trench Field Stop |
| Power - Max | 780 W | 695 W | 1040 W | 520 W |
| Operatioun Temperatur | - | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | - |
Eroflueden APTGT150A170D1G PDF DataDhusts an Microsemi Corporation Dokumentatioun fir APTGT150A170D1G - Microsemi Corporation.
APTGT100SK170D1GMicrosemi CorporationIGBT MODULE 1700V 200A 695W D1APTGT100X120TE3GAPTIGBT ModuleAPTGS25X120RTP2GAPTIGBT ModuleAPTGT200A120D3GMicrochip TechnologyIGBT MODULE 1200V 300A 1040W D3APTGS25X120BTP2APTIGBT ModuleAPTGT150X120TE3GAPTIGBT ModuleAPTGT150DA120D3GAPTIGBT ModuleAPTGT100A120D1GMicrosemi CorporationIGBT MODULE 1200V 150A 520W D1APTGT100DA120D1GMicrosemi CorporationIGBT MODULE 1200V 150A 520W D1APTGS25X120BTP2GAPTIGBT ModuleAPTGT150A120D3GAPTIGBT ModuleAPTGT150TDU60PGMicrochip TechnologyIGBT MODULE 600V 225A 480W SP6PAPTGT100TL60T3GMicrochip TechnologyIGBT MODULE 600V 150A 340W SP3APTGT200A120GMicrochip TechnologyIGBT MODULE 1200V 280A 890W SP6APTGT150SK120D1GMicrosemi CorporationIGBT MODULE 1200V 220A 700W D1APTGT150DU120TGMicrochip TechnologyIGBT MODULE 1200V 220A 690W SP4APTGT200A170D3GMicrochip TechnologyIGBT MODULE 1700V 400A 1250W D3APTGT150X120E3GIGBT Module| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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