APT6040BN Tech Spezifikatioune
Microsemi Corporation - APT6040BN technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Microsemi Corporation - APT6040BN
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Microsemi | |
| Vgs (th) (Max) @ Id | 4V @ 1mA | |
| Vgs (Max) | ±30V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-247AD | |
| Serie | POWER MOS IV® | |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 9A, 10V | |
| Power Dissipation (Max) | 310W (Tc) | |
| Package / Case | TO-247-3 | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 2950 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 600 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 18A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Microsemi Corporation APT6040BN.
| Produktiounsattriff |  |
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 |
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|---|---|---|---|---|
| Part Number | APT6040BN | APT6030BN | APT6038BLLG | APT6030BVFRG |
| Hiersteller | Microsemi Corporation | Microsemi Corporation | Microchip Technology | APT |
| Entworf fir Source Voltage (Vdss) | 600 V | 600 V | 600 V | - |
| Package protegéieren | Tube | Tube | Tube | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - |
| Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V | 210 nC @ 10 V | 43 nC @ 10 V | - |
| Serie | POWER MOS IV® | POWER MOS IV® | POWER MOS 7® | - |
| FET Feature | - | - | - | - |
| FET Typ | N-Channel | N-Channel | N-Channel | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 18A (Tc) | 23A (Tc) | 17A (Tc) | - |
| Mounting Type | Through Hole | Through Hole | Through Hole | - |
| Input Capacitance (Ciss) (Max) @ Vds | 2950 pF @ 25 V | 3500 pF @ 25 V | 1850 pF @ 25 V | - |
| Power Dissipation (Max) | 310W (Tc) | 360W (Tc) | - | - |
| Supplier Device Package | TO-247AD | TO-247AD | TO-247 [B] | - |
| Vgs (th) (Max) @ Id | 4V @ 1mA | 4V @ 1mA | 5V @ 1mA | - |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | - | - |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | - | - |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 | - |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 9A, 10V | 300mOhm @ 11.5A, 10V | 380mOhm @ 8.5A, 10V | - |
| Vgs (Max) | ±30V | ±30V | - | - |
Eroflueden APT6040BN PDF DataDhusts an Microsemi Corporation Dokumentatioun fir APT6040BN - Microsemi Corporation.
APT6030BVFRGAPTAPT60D20LCTAPTAPT60D100BAPTAPT60D100LCTGMicrochip TechnologyDIODE ARRAY GP 1000V 60A TO264APT6038BFLLAPTAPT6030BNMicrosemi CorporationMOSFET N-CH 600V 23A TO247ADAPT60D100BGMicrosemiAPT60D120BGMicrochip TechnologyDIODE GP 1.2KV 60A TO247APT6030JVFRMicrosemiIGBT ModuleAPT6030BVFRAPTAPT602JAPTIGBT ModuleAPT6035SVRAPTAPT60D120BAPTAPT6045BNAPTAPT6038BLLGMicrochip TechnologyMOSFET N-CH 600V 17A TO247APT6038BLLAPTAPT6040BVFRGAPTAPT60D20BGMicrochip TechnologyDIODE GP 200V 60A TO247| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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