NAND02GW3B2DN6E Tech Spezifikatioune
Micron Technology Inc. - NAND02GW3B2DN6E technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Micron Technology Inc. - NAND02GW3B2DN6E
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Micron Technology | |
| Schreiwe Cycle Time - Word, Page | 25ns | |
| Voltage - Supply | 2.7V ~ 3.6V | |
| Technologie | FLASH - NAND | |
| Supplier Device Package | 48-TSOP | |
| Serie | - | |
| Package / Case | 48-TFSOP (0.724", 18.40mm Width) | |
| Package protegéieren | Tray | |
| Operatioun Temperatur | -40°C ~ 85°C (TA) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Mounting Type | Surface Mount | |
| Gedächtnis Type | Non-Volatile | |
| Späichergréisst | 2Gbit | |
| Erënnerungsorganisatioun | 256M x 8 | |
| Memory Interface | Parallel | |
| Memory Format | FLASH | |
| Basis Produktnummer | NAND02G | |
| Zougangszäit | 25 ns |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Micron Technology Inc. NAND02GW3B2DN6E.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | NAND02GW3B2DN6E | NAND04GW3B2DN6E | NAND02GR3B2DZA6E | NAND02GW3B2DZA6E |
| Hiersteller | Micron Technology Inc. | Micron Technology Inc. | Micron Technology Inc. | Micron Technology Inc. |
| Operatioun Temperatur | -40°C ~ 85°C (TA) | -40°C ~ 85°C (TA) | -40°C ~ 85°C (TA) | -40°C ~ 85°C (TA) |
| Gedächtnis Type | Non-Volatile | Non-Volatile | Non-Volatile | Non-Volatile |
| Technologie | FLASH - NAND | FLASH - NAND | FLASH - NAND | FLASH - NAND |
| Supplier Device Package | 48-TSOP | 48-TSOP | 63-VFBGA (9.5x12) | 63-VFBGA (9.5x12) |
| Memory Format | FLASH | FLASH | FLASH | FLASH |
| Package / Case | 48-TFSOP (0.724", 18.40mm Width) | 48-TFSOP (0.724', 18.40mm Width) | 63-TFBGA | 63-TFBGA |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Schreiwe Cycle Time - Word, Page | 25ns | 25ns | 45ns | 25ns |
| Zougangszäit | 25 ns | 25 ns | 45 ns | 25 ns |
| Package protegéieren | Tray | Tray | Tray | Tray |
| Erënnerungsorganisatioun | 256M x 8 | 512M x 8 | 256M x 8 | 256M x 8 |
| Voltage - Supply | 2.7V ~ 3.6V | 2.7V ~ 3.6V | 1.7V ~ 1.95V | 2.7V ~ 3.6V |
| Serie | - | - | - | - |
| Memory Interface | Parallel | Parallel | Parallel | Parallel |
| Basis Produktnummer | NAND02G | NAND04G | NAND02G | NAND02G |
| Späichergréisst | 2Gbit | 4Gbit | 2Gbit | 2Gbit |
Eroflueden NAND02GW3B2DN6E PDF DataDhusts an Micron Technology Inc. Dokumentatioun fir NAND02GW3B2DN6E - Micron Technology Inc..
NAND02GR3B2DZA6STMicroelectronicsNAND04GW3B2DN6STMicroelectronicsNAND04GW3B2DN6EMicron Technology Inc.IC FLASH 4GBIT PARALLEL 48TSOP
NAND02GR3B2DZA6FNUMONYXNAND02GR3B2DZA6EMicron Technology Inc.IC FLASH 2GBIT PARALLEL 63VFBGANAND02GW3B2DN6STMicroelectronicsNAND04GW3B2BN6STMicroelectronicsNAND02GW3B2DZA6EMicron Technology Inc.IC FLASH 2GBIT PARALLEL 63VFBGANAND04GW3B2BN6ESTMicroelectronicsNAND02GW382DN6STMicroelectronicsNAND02GW3B2DZA6STMicroelectronicsNAND02GW3B2DNBSTMicroelectronicsNAND02GW3B2CN6ENAND04GW3B2DN6FSTMicroelectronicsNAND02GW3B2AN6FSTMicroelectronicsNAND02GW3B2CN6STMicroelectronicsNAND02GW3B2DZA6FNUMONYX MEMNAND02GW382DZA6NANYA| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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