DN3545N3-G Tech Spezifikatioune
Microchip Technology - DN3545N3-G technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Microchip Technology - DN3545N3-G
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Microchip Technology | |
Vgs (th) (Max) @ Id | - | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-92 (TO-226) | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 20Ohm @ 150mA, 0V | |
Power Dissipation (Max) | 740mW (Ta) | |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) | |
Package protegéieren | Bag |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 360 pF @ 25 V | |
FET Typ | N-Channel | |
FET Feature | Depletion Mode | |
Fuert Volt (Max Rds On, Min Rds On) | 0V | |
Entworf fir Source Voltage (Vdss) | 450 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 136mA (Ta) | |
Basis Produktnummer | DN3545 |
ATTRESSIOUN | BESCHREIWUNG |
---|---|
RoHs Status | |
Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
Erreecht Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Microchip Technology DN3545N3-G.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | DN3545N3-G | DN3135K1-G | STD11NM50N | DN3545N8-G |
Hiersteller | Microchip Technology | Microchip Technology | STMicroelectronics | Microchip Technology |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) | TO-236-3, SC-59, SOT-23-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-243AA |
Rds On (Max) @ Id, Vgs | 20Ohm @ 150mA, 0V | 35Ohm @ 150mA, 0V | 470mOhm @ 4.5A, 10V | 20Ohm @ 150mA, 0V |
Mounting Type | Through Hole | Surface Mount | Surface Mount | Surface Mount |
FET Feature | Depletion Mode | Depletion Mode | - | Depletion Mode |
Serie | - | - | MDmesh™ II | - |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Basis Produktnummer | DN3545 | DN3135 | STD11 | DN3545 |
Fuert Volt (Max Rds On, Min Rds On) | 0V | 0V | 10V | 0V |
Vgs (Max) | ±20V | ±20V | ±25V | ±20V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | 150°C (TJ) | -55°C ~ 150°C (TJ) |
Supplier Device Package | TO-92 (TO-226) | SOT-23-3 | DPAK | TO-243AA (SOT-89) |
Power Dissipation (Max) | 740mW (Ta) | 360mW (Ta) | 70W (Tc) | 1.6W (Ta) |
Package protegéieren | Bag | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Input Capacitance (Ciss) (Max) @ Vds | 360 pF @ 25 V | 120 pF @ 25 V | 547 pF @ 50 V | 360 pF @ 25 V |
Vgs (th) (Max) @ Id | - | - | 4V @ 250µA | - |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 136mA (Ta) | 72mA (Tj) | 8.5A (Tc) | 200mA (Ta) |
Entworf fir Source Voltage (Vdss) | 450 V | 350 V | 500 V | 450 V |
Eroflueden DN3545N3-G PDF DataDhusts an Microchip Technology Dokumentatioun fir DN3545N3-G - Microchip Technology.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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