APT8M100B Tech Spezifikatioune
Microchip Technology - APT8M100B technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Microchip Technology - APT8M100B
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Microchip Technology | |
| Vgs (th) (Max) @ Id | 5V @ 1mA | |
| Vgs (Max) | ±30V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-247 [B] | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 1.8Ohm @ 4A, 10V | |
| Power Dissipation (Max) | 290W (Tc) | |
| Package / Case | TO-247-3 | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 1885 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 1000 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 8A (Tc) | |
| Basis Produktnummer | APT8M100 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Microchip Technology APT8M100B.
| Produktiounsattriff |  |
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|
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|---|---|---|---|---|
| Part Number | APT8M100B | APT97N65LC6 | APT80SM120B | APT80M60J |
| Hiersteller | Microchip Technology | Microsemi Corporation | Microsemi Corporation | Microchip Technology |
| Basis Produktnummer | APT8M100 | APT97N65 | - | APT80M60 |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
| Serie | - | CoolMOS™ | - | POWER MOS 8™ |
| Package / Case | TO-247-3 | TO-264-3, TO-264AA | TO-247-3 | SOT-227-4, miniBLOC |
| Supplier Device Package | TO-247 [B] | TO-264 [L] | TO-247 | ISOTOP® |
| Input Capacitance (Ciss) (Max) @ Vds | 1885 pF @ 25 V | 7650 pF @ 25 V | - | 24000 pF @ 25 V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | SiCFET (Silicon Carbide) | MOSFET (Metal Oxide) |
| FET Feature | - | - | - | - |
| Vgs (th) (Max) @ Id | 5V @ 1mA | 3.5V @ 2.96mA | 2.5V @ 1mA | 5V @ 5mA |
| Rds On (Max) @ Id, Vgs | 1.8Ohm @ 4A, 10V | 41mOhm @ 48.5A, 10V | 55mOhm @ 40A, 20V | 55mOhm @ 60A, 10V |
| Power Dissipation (Max) | 290W (Tc) | 862W (Tc) | 555W (Tc) | 960W (Tc) |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 20V | 10V |
| Package protegéieren | Tube | Tube | Bulk | Tube |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V | 300 nC @ 10 V | 235 nC @ 20 V | 600 nC @ 10 V |
| Mounting Type | Through Hole | Through Hole | Through Hole | Chassis Mount |
| Vgs (Max) | ±30V | ±20V | +25V, -10V | ±30V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 8A (Tc) | 97A (Tc) | 80A (Tc) | 84A (Tc) |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Entworf fir Source Voltage (Vdss) | 1000 V | 650 V | 1200 V | 600 V |
Eroflueden APT8M100B PDF DataDhusts an Microchip Technology Dokumentatioun fir APT8M100B - Microchip Technology.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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