APT7M120B Tech Spezifikatioune
Microchip Technology - APT7M120B technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Microchip Technology - APT7M120B
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Microchip Technology | |
| Vgs (th) (Max) @ Id | 5V @ 1mA | |
| Vgs (Max) | ±30V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-247 [B] | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 2.5Ohm @ 3A, 10V | |
| Power Dissipation (Max) | 335W (Tc) | |
| Package / Case | TO-247-3 | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 2565 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 1200 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 8A (Tc) | |
| Basis Produktnummer | APT7M120 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Microchip Technology APT7M120B.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | APT7M120B | APT8011JLL | APT8011JFLL | APT8014L2FLLG |
| Hiersteller | Microchip Technology | Microchip Technology | Microchip Technology | Microchip Technology |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | - | - | - |
| Entworf fir Source Voltage (Vdss) | 1200 V | 800 V | 800 V | 800 V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 8A (Tc) | 51A (Tc) | 51A (Tc) | 52A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.5Ohm @ 3A, 10V | 110mOhm @ 25.5A, 10V | 125mOhm @ 25.5A, 10V | 160mOhm @ 26A, 10V |
| Package protegéieren | Tube | Tube | Tube | Tube |
| FET Feature | - | - | - | - |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | - | - | - |
| Supplier Device Package | TO-247 [B] | ISOTOP® | ISOTOP® | 264 MAX™ [L2] |
| Gate Charge (Qg) (Max) @ Vgs | 80 nC @ 10 V | 650 nC @ 10 V | 650 nC @ 10 V | 285 nC @ 10 V |
| Package / Case | TO-247-3 | SOT-227-4, miniBLOC | SOT-227-4, miniBLOC | TO-264-3, TO-264AA |
| Basis Produktnummer | APT7M120 | APT8011 | APT8011 | APT8014 |
| Mounting Type | Through Hole | Chassis Mount | Chassis Mount | Through Hole |
| Vgs (Max) | ±30V | - | - | - |
| Serie | - | POWER MOS 7® | POWER MOS 7® | POWER MOS 7® |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Vgs (th) (Max) @ Id | 5V @ 1mA | 5V @ 5mA | 5V @ 5mA | 5V @ 5mA |
| Power Dissipation (Max) | 335W (Tc) | - | - | - |
| Input Capacitance (Ciss) (Max) @ Vds | 2565 pF @ 25 V | 9480 pF @ 25 V | 9480 pF @ 25 V | 7238 pF @ 25 V |
Eroflueden APT7M120B PDF DataDhusts an Microchip Technology Dokumentatioun fir APT7M120B - Microchip Technology.
APT8011JLLXAPTIGBT ModuleAPT7L05SFHOLTEKAPT7843ADC07ANPCEAPT8014L2FLLAPTAPT8011JLLMicrochip TechnologyMOSFET N-CH 800V 51A ISOTOPAPT8011JFLLMicrochip TechnologyMOSFET N-CH 800V 51A ISOTOPAPT77N60S06APTIGBT ModuleAPT8011APTIGBT ModuleAPT7M120APTAPT7843NI-TRANPCEAPT7846ODAA1ANPCEAPT8014L2FLLGMicrochip TechnologyMOSFET N-CH 800V 52A 264 MAXAPT8014JFLLAPTIGBT Module
APT8014JLLMicrochip TechnologyMOSFET N-CH 800V 42A ISOTOPAPT7846ADC07ANPCEAPT7L65SFHOLLTEK
APT8015JNMicrosemiIGBT ModuleAPT77N60JC3XAPTIGBT Module| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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