APT40GR120B2D30 Tech Spezifikatioune
Microchip Technology - APT40GR120B2D30 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Microchip Technology - APT40GR120B2D30
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Microchip Technology | |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V | |
| Vce (on) (Max) @ Vge, Ic | 3.2V @ 15V, 40A | |
| Test Condition | 600V, 40A, 4.3Ohm, 15V | |
| Td (on / off) @ 25 ° C | 22ns/163ns | |
| Energie schalten | 1.38mJ (on), 906µJ (off) | |
| Supplier Device Package | TO-247-3 | |
| Serie | - | |
| Power - Max | 500 W | |
| Package / Case | TO-247-3 |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Tube | |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Type | Standard | |
| IGBT Type | NPT | |
| Gate Charge | 210 nC | |
| Aktuell - Sammler Pulséiert (Icm) | 160 A | |
| Aktuell - Sammler (Ic) (Max) | 88 A | |
| Basis Produktnummer | APT40GR120 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Microchip Technology APT40GR120B2D30.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | APT40GR120B2D30 | APT40GP90B2DQ2G | APT40GT60BRG | APT40GP60BG |
| Hiersteller | Microchip Technology | Microchip Technology | Microchip Technology | Microchip Technology |
| Package / Case | TO-247-3 | TO-247-3 Variant | TO-247-3 | TO-247-3 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Serie | - | POWER MOS 7® | Thunderbolt IGBT® | POWER MOS 7® |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V | 900 V | 600 V | 600 V |
| Supplier Device Package | TO-247-3 | - | TO-247 [B] | TO-247 [B] |
| Power - Max | 500 W | 543 W | 345 W | 543 W |
| Input Type | Standard | Standard | Standard | Standard |
| Vce (on) (Max) @ Vge, Ic | 3.2V @ 15V, 40A | 3.9V @ 15V, 40A | 2.5V @ 15V, 40A | 2.7V @ 15V, 40A |
| Energie schalten | 1.38mJ (on), 906µJ (off) | 795µJ (off) | 828µJ (off) | 385µJ (on), 352µJ (off) |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Gate Charge | 210 nC | 145 nC | 200 nC | 135 nC |
| Basis Produktnummer | APT40GR120 | APT40GP90 | APT40GT60 | APT40GP60 |
| Aktuell - Sammler Pulséiert (Icm) | 160 A | 160 A | 160 A | 160 A |
| IGBT Type | NPT | PT | NPT | PT |
| Test Condition | 600V, 40A, 4.3Ohm, 15V | 600V, 40A, 4.3Ohm, 15V | 400V, 40A, 5Ohm, 15V | 400V, 40A, 5Ohm, 15V |
| Aktuell - Sammler (Ic) (Max) | 88 A | 101 A | 80 A | 100 A |
| Td (on / off) @ 25 ° C | 22ns/163ns | 14ns/90ns | 12ns/124ns | 20ns/64ns |
| Package protegéieren | Tube | Tube | Tube | Tube |
Eroflueden APT40GR120B2D30 PDF DataDhusts an Microchip Technology Dokumentatioun fir APT40GR120B2D30 - Microchip Technology.
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APT40M70JVFRMicrosemi CorporationMOSFET N-CH 400V 53A ISOTOPAPT40M35JVFRMicrosemi CorporationMOSFET N-CH 400V 93A ISOTOP
APT40GR120B2SCD10Microsemi CorporationIGBT 1200V 88A 500W TO247APT40GP90JDF2MicrosemiIGBT ModuleAPT40GT60BRAPTAPT40GP60BAPTAPT40GP90JDQ2Microchip TechnologyIGBT MODULE 900V 64A 284W ISOTOPAPT40M42JNMicrosemi CorporationMOSFET N-CH 400V 86A ISOTOPAPT40GP90JMicrochip TechnologyIGBT MODULE 900V 68A 284W ISOTOPAPT40G100ANAPTAPT40GR120SMicrochip TechnologyIGBT 1200V 88A 500W D3PAK| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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