TPS1100DR Tech Spezifikatioune
Texas Instruments - TPS1100DR technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Texas Instruments - TPS1100DR
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Texas Instruments | |
| Vgs (th) (Max) @ Id | 1.5V @ 250µA | |
| Vgs (Max) | +2V, -15V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 8-SOIC | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 1.5A, 10V | |
| Power Dissipation (Max) | 791mW (Ta) | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -40°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Gate Charge (Qg) (Max) @ Vgs | 5.45 nC @ 10 V | |
| FET Typ | P-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 2.7V, 10V | |
| Entworf fir Source Voltage (Vdss) | 15 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.6A (Ta) | |
| Basis Produktnummer | TPS1100 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Texas Instruments TPS1100DR.
| Produktiounsattriff |  |
|
 |
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|---|---|---|---|---|
| Part Number | TPS1100DR | TPS1101DR | TPS1101DRG4 | TPS1100PWR |
| Hiersteller | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
| Serie | - | - | - | - |
| Entworf fir Source Voltage (Vdss) | 15 V | 15 V | 15V | 15 V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.6A (Ta) | 2.3A (Ta) | 2.3A (Ta) | 1.27A (Ta) |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-TSSOP (0.173", 4.40mm Width) |
| FET Typ | P-Channel | P-Channel | P-Channel | P-Channel |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Vgs (Max) | +2V, -15V | +2V, -15V | +2V, -15V | +2V, -15V |
| Fuert Volt (Max Rds On, Min Rds On) | 2.7V, 10V | 2.7V, 10V | 2.7V, 10V | 2.7V, 10V |
| Power Dissipation (Max) | 791mW (Ta) | 791mW (Ta) | 791mW (Ta) | 504mW (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 5.45 nC @ 10 V | 11.25 nC @ 10 V | 11.25nC @ 10V | 5.45 nC @ 10 V |
| Supplier Device Package | 8-SOIC | 8-SOIC | 8-SOIC | 8-TSSOP |
| Basis Produktnummer | TPS1100 | TPS1101 | - | TPS1100 |
| Vgs (th) (Max) @ Id | 1.5V @ 250µA | 1.5V @ 250µA | 1.5V @ 250µA | 1.5V @ 250µA |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | - | Tape & Reel (TR) |
| Operatioun Temperatur | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) |
| FET Feature | - | - | - | - |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 1.5A, 10V | 90mOhm @ 2.5A, 10V | 90 mOhm @ 2.5A, 10V | 180mOhm @ 1.5A, 10V |
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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