CSD87331Q3D Tech Spezifikatioune
Texas Instruments - CSD87331Q3D technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Texas Instruments - CSD87331Q3D
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Texas Instruments | |
| Vgs (th) (Max) @ Id | 2.1V, 1.2V @ 250µA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 8-LSON (5x6) | |
| Serie | NexFET™ | |
| Rds On (Max) @ Id, Vgs | - | |
| Power - Max | 6W | |
| Package / Case | 8-PowerLDFN | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 518pF @ 15V | |
| Gate Charge (Qg) (Max) @ Vgs | 3.2nC @ 4.5V | |
| FET Feature | - | |
| Entworf fir Source Voltage (Vdss) | 30V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 15A | |
| Konfiguratioun | 2 N-Channel (Half Bridge) | |
| Basis Produktnummer | CSD87331Q3 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Texas Instruments CSD87331Q3D.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | CSD87331Q3D | CSD87330Q3D | CSD87335Q3D | CSD87333Q3D |
| Hiersteller | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Power - Max | 6W | 6W | 6W | 6W |
| Package / Case | 8-PowerLDFN | 8-PowerLDFN | 8-PowerLDFN | 8-PowerTDFN |
| FET Feature | - | Logic Level Gate | - | Logic Level Gate, 5V Drive |
| Input Capacitance (Ciss) (Max) @ Vds | 518pF @ 15V | 900pF @ 15V | 1050pF @ 15V | 662pF @ 15V |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | 125°C (TJ) |
| Supplier Device Package | 8-LSON (5x6) | 8-LSON (3.3x3.3) | 8-LSON (3.3x3.3) | 8-VSON (3.3x3.3) |
| Serie | NexFET™ | NexFET™ | NexFET™ | NexFET™ |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Rds On (Max) @ Id, Vgs | - | - | - | 14.3mOhm @ 4A, 8V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 15A | 20A | - | 15A |
| Basis Produktnummer | CSD87331Q3 | CSD87330 | CSD87335Q3 | CSD87333Q3 |
| Gate Charge (Qg) (Max) @ Vgs | 3.2nC @ 4.5V | 5.8nC @ 4.5V | 7.4nC @ 4.5V | 4.6nC @ 4.5V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Vgs (th) (Max) @ Id | 2.1V, 1.2V @ 250µA | 2.1V @ 250µA | 1.9V @ 250µA | 1.2V @ 250µA |
| Entworf fir Source Voltage (Vdss) | 30V | 30V | 30V | 30V |
| Konfiguratioun | 2 N-Channel (Half Bridge) | 2 N-Channel (Half Bridge) | 2 N-Channel (Dual) Asymmetrical | 2 N-Channel (Dual) Asymmetrical |
Eroflueden CSD87331Q3D PDF DataDhusts an Texas Instruments Dokumentatioun fir CSD87331Q3D - Texas Instruments.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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