CSD75301W1015 Tech Spezifikatioune
Texas Instruments - CSD75301W1015 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Texas Instruments - CSD75301W1015
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Texas Instruments | |
| Vgs (th) (Max) @ Id | 1V @ 250µA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 6-DSBGA (1x1.5) | |
| Serie | NexFET™ | |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 1A, 4.5V | |
| Power - Max | 800mW | |
| Package / Case | 6-UFBGA, DSBGA | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 195pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 2.1nC @ 4.5V | |
| FET Feature | Logic Level Gate | |
| Entworf fir Source Voltage (Vdss) | 20V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.2A | |
| Konfiguratioun | 2 P-Channel (Dual) | |
| Basis Produktnummer | CSD75301 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Texas Instruments CSD75301W1015.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | CSD75301W1015 | CSD85312Q3E | CSD85302L | CSD86330Q3D |
| Hiersteller | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Power - Max | 800mW | 2.5W | 1.7W | 6W |
| Gate Charge (Qg) (Max) @ Vgs | 2.1nC @ 4.5V | 15.2nC @ 4.5V | 7.8nC @ 4.5V | 6.2nC @ 4.5V |
| Konfiguratioun | 2 P-Channel (Dual) | 2 N-Channel (Dual) Common Source | 2 N-Channel (Dual) Common Drain | 2 N-Channel (Half Bridge) |
| Entworf fir Source Voltage (Vdss) | 20V | 20V | - | 25V |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Serie | NexFET™ | NexFET™ | NexFET™ | NexFET™ |
| Input Capacitance (Ciss) (Max) @ Vds | 195pF @ 10V | 2390pF @ 10V | - | 920pF @ 12.5V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.2A | 39A | - | 20A |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 1A, 4.5V | 12.4mOhm @ 10A, 8V | - | 9.6mOhm @ 14A, 8V |
| Package / Case | 6-UFBGA, DSBGA | 8-PowerVDFN | 4-XFLGA | 8-PowerLDFN |
| Basis Produktnummer | CSD75301 | CSD85312 | CSD85302 | CSD86330Q3 |
| Vgs (th) (Max) @ Id | 1V @ 250µA | 1.4V @ 250µA | - | 2.1V @ 250µA |
| FET Feature | Logic Level Gate | Logic Level Gate, 5V Drive | - | Logic Level Gate |
| Supplier Device Package | 6-DSBGA (1x1.5) | 8-VSON (3.3x3.3) | 4-Picostar (1.31x1.31) | 8-LSON (3.3x3.3) |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Eroflueden CSD75301W1015 PDF DataDhusts an Texas Instruments Dokumentatioun fir CSD75301W1015 - Texas Instruments.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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