CSD25201W15 Tech Spezifikatioune
Texas Instruments - CSD25201W15 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Texas Instruments - CSD25201W15
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Texas Instruments | |
| Vgs (th) (Max) @ Id | 1.1V @ 250µA | |
| Vgs (Max) | -6V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 9-DSBGA | |
| Serie | NexFET™ | |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 2A, 4.5V | |
| Power Dissipation (Max) | 1.5W (Ta) | |
| Package / Case | 9-UFBGA, DSBGA | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 510 pF @ 10 V | |
| Gate Charge (Qg) (Max) @ Vgs | 5.6 nC @ 4.5 V | |
| FET Typ | P-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
| Entworf fir Source Voltage (Vdss) | 20 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4A (Ta) | |
| Basis Produktnummer | CSD25201 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Texas Instruments CSD25201W15.
| Produktiounsattriff |  |
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 |
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|---|---|---|---|---|
| Part Number | CSD25201W15 | CSD25213W10 | CSD25304W1015 | CSD25301W1015 |
| Hiersteller | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
| Fuert Volt (Max Rds On, Min Rds On) | 1.8V, 4.5V | 2.5V, 4.5V | 1.8V, 4.5V | 1.5V, 4.5V |
| Vgs (th) (Max) @ Id | 1.1V @ 250µA | 1.1V @ 250µA | 1.15V @ 250µA | 1V @ 250µA |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Vgs (Max) | -6V | -6V | ±8V | ±8V |
| Gate Charge (Qg) (Max) @ Vgs | 5.6 nC @ 4.5 V | 2.9 nC @ 4.5 V | 4.4 nC @ 4.5 V | 2.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 510 pF @ 10 V | 478 pF @ 10 V | 595 pF @ 10 V | 270 pF @ 10 V |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4A (Ta) | 1.6A (Ta) | 3A (Ta) | 2.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 2A, 4.5V | 47mOhm @ 1A, 4.5V | 32.5mOhm @ 1.5A, 4.5V | 75mOhm @ 1A, 4.5V |
| FET Typ | P-Channel | P-Channel | P-Channel | P-Channel |
| Supplier Device Package | 9-DSBGA | 4-DSBGA (1x1) | 6-DSBGA (1x1.5) | 6-DSBGA (1x1.5) |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| FET Feature | - | - | - | - |
| Serie | NexFET™ | NexFET™ | NexFET™ | NexFET™ |
| Entworf fir Source Voltage (Vdss) | 20 V | 20 V | 20 V | 20 V |
| Package / Case | 9-UFBGA, DSBGA | 4-UFBGA, DSBGA | 6-UFBGA, DSBGA | 6-UFBGA, DSBGA |
| Basis Produktnummer | CSD25201 | CSD25213 | CSD25304 | CSD2530 |
| Power Dissipation (Max) | 1.5W (Ta) | 1W (Ta) | 750mW (Ta) | 1.5W (Ta) |
Eroflueden CSD25201W15 PDF DataDhusts an Texas Instruments Dokumentatioun fir CSD25201W15 - Texas Instruments.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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