CSD19501KCS Tech Spezifikatioune
Texas Instruments - CSD19501KCS technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Texas Instruments - CSD19501KCS
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Texas Instruments | |
Vgs (th) (Max) @ Id | 3.2V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220-3 | |
Serie | NexFET™ | |
Rds On (Max) @ Id, Vgs | 6.6mOhm @ 60A, 10V | |
Power Dissipation (Max) | 217W (Tc) | |
Package / Case | TO-220-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 3980 pF @ 40 V | |
Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 6V, 10V | |
Entworf fir Source Voltage (Vdss) | 80 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 100A (Ta) | |
Basis Produktnummer | CSD19501 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Texas Instruments CSD19501KCS.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | CSD19501KCS | CSD19502Q5BT | CSD19505KTT | CSD18541F5T |
Hiersteller | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
Supplier Device Package | TO-220-3 | 8-VSON-CLIP (5x6) | DDPAK/TO-263-3 | 3-PICOSTAR |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 100A (Ta) | 100A (Ta) | 200A (Ta) | 2.2A (Ta) |
Fuert Volt (Max Rds On, Min Rds On) | 6V, 10V | 6V, 10V | 6V, 10V | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 6.6mOhm @ 60A, 10V | 4.1mOhm @ 19A, 10V | 3.1mOhm @ 100A, 10V | 65mOhm @ 1A, 10V |
Serie | NexFET™ | NexFET™ | NexFET™ | FemtoFET™ |
FET Feature | - | - | - | - |
Entworf fir Source Voltage (Vdss) | 80 V | 80 V | 80 V | 60 V |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V | 62 nC @ 10 V | 76 nC @ 10 V | 14 nC @ 10 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Power Dissipation (Max) | 217W (Tc) | 3.1W (Ta), 195W (Tc) | 300W (Tc) | 500mW (Ta) |
Package protegéieren | Tube | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Input Capacitance (Ciss) (Max) @ Vds | 3980 pF @ 40 V | 4870 pF @ 40 V | 7920 pF @ 40 V | 777 pF @ 30 V |
Package / Case | TO-220-3 | 8-PowerTDFN | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA | 3-SMD, No Lead |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole | Surface Mount | Surface Mount | Surface Mount |
Basis Produktnummer | CSD19501 | CSD19502 | CSD19505 | CSD18541 |
Vgs (th) (Max) @ Id | 3.2V @ 250µA | 3.3V @ 250µA | 3.2V @ 250µA | 2.2V @ 250µA |
Eroflueden CSD19501KCS PDF DataDhusts an Texas Instruments Dokumentatioun fir CSD19501KCS - Texas Instruments.
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DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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