CSD18543Q3AT Tech Spezifikatioune
Texas Instruments - CSD18543Q3AT technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Texas Instruments - CSD18543Q3AT
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Texas Instruments | |
Vgs (th) (Max) @ Id | 2.7V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | 8-VSONP (3x3.15) | |
Serie | NexFET™ | |
Rds On (Max) @ Id, Vgs | 15.6mOhm @ 12A, 4.5V | |
Power Dissipation (Max) | 66W (Tc) | |
Package / Case | 8-PowerVDFN | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 1150 pF @ 30 V | |
Gate Charge (Qg) (Max) @ Vgs | 14.5 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | Standard | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 60 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 12A (Ta), 60A (Tc) | |
Basis Produktnummer | CSD18543 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Texas Instruments CSD18543Q3AT.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | CSD18543Q3AT | CSD19501KCS | CSD18541F5T | CSD18542KTT |
Hiersteller | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
Package protegéieren | Tape & Reel (TR) | Tube | Tape & Reel (TR) | Tape & Reel (TR) |
Serie | NexFET™ | NexFET™ | FemtoFET™ | NexFET™ |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 12A (Ta), 60A (Tc) | 100A (Ta) | 2.2A (Ta) | 200A (Ta) |
Rds On (Max) @ Id, Vgs | 15.6mOhm @ 12A, 4.5V | 6.6mOhm @ 60A, 10V | 65mOhm @ 1A, 10V | 4mOhm @ 100A, 10V |
Entworf fir Source Voltage (Vdss) | 60 V | 80 V | 60 V | 60 V |
Basis Produktnummer | CSD18543 | CSD19501 | CSD18541 | CSD18542 |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 6V, 10V | 4.5V, 10V | 4.5V, 10V |
FET Feature | Standard | - | - | - |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Power Dissipation (Max) | 66W (Tc) | 217W (Tc) | 500mW (Ta) | 250W (Tc) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Package / Case | 8-PowerVDFN | TO-220-3 | 3-SMD, No Lead | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Vgs (th) (Max) @ Id | 2.7V @ 250µA | 3.2V @ 250µA | 2.2V @ 250µA | 2.2V @ 250µA |
Input Capacitance (Ciss) (Max) @ Vds | 1150 pF @ 30 V | 3980 pF @ 40 V | 777 pF @ 30 V | 5070 pF @ 30 V |
Mounting Type | Surface Mount | Through Hole | Surface Mount | Surface Mount |
Gate Charge (Qg) (Max) @ Vgs | 14.5 nC @ 10 V | 50 nC @ 10 V | 14 nC @ 10 V | 57 nC @ 10 V |
Supplier Device Package | 8-VSONP (3x3.15) | TO-220-3 | 3-PICOSTAR | DDPAK/TO-263-3 |
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.