CSD18504Q5A Tech Spezifikatioune
Texas Instruments - CSD18504Q5A technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Texas Instruments - CSD18504Q5A
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Texas Instruments | |
| Vgs (th) (Max) @ Id | 2.4V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 8-VSONP (5x6) | |
| Serie | NexFET™ | |
| Rds On (Max) @ Id, Vgs | 6.6mOhm @ 17A, 10V | |
| Power Dissipation (Max) | 3.1W (Ta), 77W (Tc) | |
| Package / Case | 8-PowerTDFN | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 1656 pF @ 20 V | |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 40 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 15A (Ta), 50A (Tc) | |
| Basis Produktnummer | CSD18504 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Texas Instruments CSD18504Q5A.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | CSD18504Q5A | CSD18503Q5AT | CSD18504Q5AT | CSD18502KCS |
| Hiersteller | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
| Vgs (th) (Max) @ Id | 2.4V @ 250µA | 2.3V @ 250µA | 2.4V @ 250µA | 2.1V @ 250µA |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 15A (Ta), 50A (Tc) | 100A (Tc) | 50A (Ta) | 100A (Tc) |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Through Hole |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Basis Produktnummer | CSD18504 | CSD18503 | CSD18504 | CSD18502 |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Serie | NexFET™ | NexFET™ | NexFET™ | NexFET™ |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tube |
| Power Dissipation (Max) | 3.1W (Ta), 77W (Tc) | 3.1W (Ta), 120W (Tc) | 3.1W (Ta), 77W (Tc) | 259W (Tc) |
| Supplier Device Package | 8-VSONP (5x6) | 8-VSONP (5x6) | 8-VSONP (5x6) | TO-220-3 |
| Entworf fir Source Voltage (Vdss) | 40 V | 40 V | 40 V | 40 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1656 pF @ 20 V | 2640 pF @ 20 V | 1656 pF @ 20 V | 4680 pF @ 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V | 16 nC @ 4.5 V | 9.2 nC @ 4.5 V | 62 nC @ 10 V |
| FET Feature | - | - | - | - |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Rds On (Max) @ Id, Vgs | 6.6mOhm @ 17A, 10V | 4.3mOhm @ 22A, 10V | 6.6mOhm @ 17A, 10V | 2.9mOhm @ 100A, 10V |
| Package / Case | 8-PowerTDFN | 8-PowerTDFN | 8-PowerTDFN | TO-220-3 |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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