CSD13306W Tech Spezifikatioune
Texas Instruments - CSD13306W technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Texas Instruments - CSD13306W
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Texas Instruments | |
| Vgs (th) (Max) @ Id | 1.3V @ 250µA | |
| Vgs (Max) | ±10V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 6-DSBGA (1x1.5) | |
| Serie | NexFET™ | |
| Rds On (Max) @ Id, Vgs | 10.2mOhm @ 1.5A, 4.5V | |
| Power Dissipation (Max) | 1.9W (Ta) | |
| Package / Case | 6-UFBGA, DSBGA | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 1370 pF @ 6 V | |
| Gate Charge (Qg) (Max) @ Vgs | 11.2 nC @ 4.5 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
| Entworf fir Source Voltage (Vdss) | 12 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.5A (Ta) | |
| Basis Produktnummer | CSD13306 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Texas Instruments CSD13306W.
| Produktiounsattriff |  |
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|
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|---|---|---|---|---|
| Part Number | CSD13306W | CSD13385F5 | CSD13380F3 | CSD13201W10 |
| Hiersteller | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Entworf fir Source Voltage (Vdss) | 12 V | 12 V | 12 V | 12 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1370 pF @ 6 V | 674 pF @ 6 V | 156 pF @ 6 V | 462 pF @ 6 V |
| Basis Produktnummer | CSD13306 | CSD13385 | CSD13380 | CSD13201 |
| Power Dissipation (Max) | 1.9W (Ta) | 500mW (Ta) | 500mW (Ta) | 1.2W (Ta) |
| Vgs (Max) | ±10V | 8V | 8V | ±8V |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 4.5V | 1.8V, 4.5V | 1.8V, 4.5V | 1.8V, 4.5V |
| Package / Case | 6-UFBGA, DSBGA | 3-SMD, No Lead | 3-XFDFN | 4-UFBGA, DSBGA |
| FET Feature | - | - | - | - |
| Vgs (th) (Max) @ Id | 1.3V @ 250µA | 1.2V @ 250µA | 1.3V @ 250µA | 1.1V @ 250µA |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.5A (Ta) | 4.3A (Ta) | 3.6A (Ta) | 1.6A (Ta) |
| Serie | NexFET™ | FemtoFET™ | FemtoFET™ | NexFET™ |
| Supplier Device Package | 6-DSBGA (1x1.5) | 3-PICOSTAR | 3-PICOSTAR | 4-DSBGA (1x1) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Gate Charge (Qg) (Max) @ Vgs | 11.2 nC @ 4.5 V | 5 nC @ 4.5 V | 1.2 nC @ 4.5 V | 2.9 nC @ 4.5 V |
| Rds On (Max) @ Id, Vgs | 10.2mOhm @ 1.5A, 4.5V | 19mOhm @ 900mA, 4.5V | 76mOhm @ 400mA, 4.5V | 34mOhm @ 1A, 4.5V |
Eroflueden CSD13306W PDF DataDhusts an Texas Instruments Dokumentatioun fir CSD13306W - Texas Instruments.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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