CSD13302W Tech Spezifikatioune
Texas Instruments - CSD13302W technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Texas Instruments - CSD13302W
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Texas Instruments | |
| Vgs (th) (Max) @ Id | 1.3V @ 250µA | |
| Vgs (Max) | ±10V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 4-DSBGA (1x1) | |
| Serie | NexFET™ | |
| Rds On (Max) @ Id, Vgs | 17.1mOhm @ 1A, 4.5V | |
| Power Dissipation (Max) | 1.8W (Ta) | |
| Package / Case | 4-UFBGA, DSBGA | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 862 pF @ 6 V | |
| Gate Charge (Qg) (Max) @ Vgs | 7.8 nC @ 4.5 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
| Entworf fir Source Voltage (Vdss) | 12 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.6A (Ta) | |
| Basis Produktnummer | CSD13302 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Texas Instruments CSD13302W.
| Produktiounsattriff |  |
 |
 |
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|---|---|---|---|---|
| Part Number | CSD13302W | CSD13202Q2 | CSD13306W | CSD13381F4T |
| Hiersteller | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.6A (Ta) | 22A (Ta) | 3.5A (Ta) | 2.1A (Ta) |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Supplier Device Package | 4-DSBGA (1x1) | 6-WSON (2x2) | 6-DSBGA (1x1.5) | 3-PICOSTAR |
| Basis Produktnummer | CSD13302 | CSD13202 | CSD13306 | CSD13381F4 |
| Vgs (Max) | ±10V | ±8V | ±10V | 8V |
| Gate Charge (Qg) (Max) @ Vgs | 7.8 nC @ 4.5 V | 6.6 nC @ 4.5 V | 11.2 nC @ 4.5 V | 1.4 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 862 pF @ 6 V | 997 pF @ 6 V | 1370 pF @ 6 V | 200 pF @ 6 V |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| FET Feature | - | - | - | - |
| Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 4.5V | 2.5V, 4.5V | 2.5V, 4.5V | 1.8V, 4.5V |
| Power Dissipation (Max) | 1.8W (Ta) | 2.7W (Ta) | 1.9W (Ta) | 500mW (Ta) |
| Package / Case | 4-UFBGA, DSBGA | 6-WDFN Exposed Pad | 6-UFBGA, DSBGA | 3-XFDFN |
| Serie | NexFET™ | NexFET™ | NexFET™ | FemtoFET™ |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Entworf fir Source Voltage (Vdss) | 12 V | 12 V | 12 V | 12 V |
| Vgs (th) (Max) @ Id | 1.3V @ 250µA | 1.1V @ 250µA | 1.3V @ 250µA | 1.1V @ 250µA |
| Rds On (Max) @ Id, Vgs | 17.1mOhm @ 1A, 4.5V | 9.3mOhm @ 5A, 4.5V | 10.2mOhm @ 1.5A, 4.5V | 180mOhm @ 500mA, 4.5V |
Eroflueden CSD13302W PDF DataDhusts an Texas Instruments Dokumentatioun fir CSD13302W - Texas Instruments.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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