RZM002P02T2L Tech Spezifikatioune
Rohm Semiconductor - RZM002P02T2L technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Rohm Semiconductor - RZM002P02T2L
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | LAPIS Technology | |
Vgs (th) (Max) @ Id | 1V @ 100µA | |
Vgs (Max) | ±10V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | VMT3 | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 1.2Ohm @ 200mA, 4.5V | |
Power Dissipation (Max) | 150mW (Ta) | |
Package / Case | SOT-723 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 115 pF @ 10 V | |
Gate Charge (Qg) (Max) @ Vgs | 1.4 nC @ 4.5 V | |
FET Typ | P-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 1.2V, 4.5V | |
Entworf fir Source Voltage (Vdss) | 20 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 200mA (Ta) | |
Basis Produktnummer | RZM002 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Rohm Semiconductor RZM002P02T2L.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | RZM002P02T2L | FQPF9N90C | BVSS123LT1G | IPD90N04S304ATMA1 |
Hiersteller | Rohm Semiconductor | onsemi | onsemi | Infineon Technologies |
Rds On (Max) @ Id, Vgs | 1.2Ohm @ 200mA, 4.5V | 1.4Ohm @ 4A, 10V | 6Ohm @ 100mA, 10V | 3.6mOhm @ 80A, 10V |
Mounting Type | Surface Mount | Through Hole | Surface Mount | Surface Mount |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 200mA (Ta) | 8A (Tc) | 170mA (Ta) | 90A (Tc) |
Vgs (th) (Max) @ Id | 1V @ 100µA | 5V @ 250µA | 2.8V @ 1mA | 4V @ 90µA |
Operatioun Temperatur | 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) |
Entworf fir Source Voltage (Vdss) | 20 V | 900 V | 100 V | 40 V |
Power Dissipation (Max) | 150mW (Ta) | 68W (Tc) | 225mW (Ta) | 136W (Tc) |
Vgs (Max) | ±10V | ±30V | ±20V | ±20V |
Serie | - | QFET® | Automotive, AEC-Q101 | OptiMOS™ |
Input Capacitance (Ciss) (Max) @ Vds | 115 pF @ 10 V | 2730 pF @ 25 V | 20 pF @ 25 V | 5200 pF @ 25 V |
Fuert Volt (Max Rds On, Min Rds On) | 1.2V, 4.5V | 10V | 10V | 10V |
Supplier Device Package | VMT3 | TO-220F-3 | SOT-23-3 (TO-236) | PG-TO252-3-11 |
Gate Charge (Qg) (Max) @ Vgs | 1.4 nC @ 4.5 V | 58 nC @ 10 V | - | 80 nC @ 10 V |
FET Typ | P-Channel | N-Channel | N-Channel | N-Channel |
Basis Produktnummer | RZM002 | FQPF9 | BVSS123 | IPD90 |
Package / Case | SOT-723 | TO-220-3 Full Pack | TO-236-3, SC-59, SOT-23-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Package protegéieren | Tape & Reel (TR) | Tube | Tape & Reel (TR) | Tape & Reel (TR) |
FET Feature | - | - | - | - |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Eroflueden RZM002P02T2L PDF DataDhusts an Rohm Semiconductor Dokumentatioun fir RZM002P02T2L - Rohm Semiconductor.
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
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1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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