RUM002N05T2L Tech Spezifikatioune
Rohm Semiconductor - RUM002N05T2L technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Rohm Semiconductor - RUM002N05T2L
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | LAPIS Technology | |
| Vgs (th) (Max) @ Id | 1V @ 1mA | |
| Vgs (Max) | ±8V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | VMT3 | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 2.2Ohm @ 200mA, 4.5V | |
| Power Dissipation (Max) | 150mW (Ta) | |
| Package / Case | SOT-723 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 25 pF @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 1.2V, 4.5V | |
| Entworf fir Source Voltage (Vdss) | 50 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 200mA (Ta) | |
| Basis Produktnummer | RUM002 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Rohm Semiconductor RUM002N05T2L.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | RUM002N05T2L | RUM003N02T2L | RUM002N02T2L | RUM002N02G T2L |
| Hiersteller | Rohm Semiconductor | Rohm Semiconductor | Rohm Semiconductor | LAPIS Technology |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | - |
| Rds On (Max) @ Id, Vgs | 2.2Ohm @ 200mA, 4.5V | 1Ohm @ 300mA, 4V | 1.2Ohm @ 200mA, 2.5V | - |
| Serie | - | - | - | - |
| FET Feature | - | - | - | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - |
| Power Dissipation (Max) | 150mW (Ta) | 150mW (Ta) | 150mW (Ta) | - |
| Vgs (th) (Max) @ Id | 1V @ 1mA | 1V @ 1mA | 1V @ 1mA | - |
| Fuert Volt (Max Rds On, Min Rds On) | 1.2V, 4.5V | 1.8V, 4V | 1.2V, 2.5V | - |
| Entworf fir Source Voltage (Vdss) | 50 V | 20 V | 20 V | - |
| Input Capacitance (Ciss) (Max) @ Vds | 25 pF @ 10 V | 25 pF @ 10 V | 25 pF @ 10 V | - |
| Operatioun Temperatur | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) | - |
| Package / Case | SOT-723 | SOT-723 | SOT-723 | - |
| FET Typ | N-Channel | N-Channel | N-Channel | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 200mA (Ta) | 300mA (Ta) | 200mA (Ta) | - |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | - |
| Supplier Device Package | VMT3 | VMT3 | VMT3 | - |
| Vgs (Max) | ±8V | ±8V | ±8V | - |
| Basis Produktnummer | RUM002 | RUM003 | RUM002 | - |
Eroflueden RUM002N05T2L PDF DataDhusts an Rohm Semiconductor Dokumentatioun fir RUM002N05T2L - Rohm Semiconductor.
RUM002N02G T2LLAPIS TechnologyRUM002N02GLAPIS TechnologyRUM003N02GT2LLAPIS TechnologyRUM002N02GT2CLLAPIS TechnologyRUM003N02T2LRohm SemiconductorMOSFET N-CH 20V 300MA VMT3RUM002N05LAPIS TechnologyRUM003N02G T2LLAPIS TechnologyRUM002N02T2LRohm SemiconductorMOSFET N-CH 20V 200MA VMT3RUM002N02TLLAPIS TechnologyRUM002N05 T2LLAPIS TechnologyRUMBTAC-1-2SIIGBT ModuleRUM002N05GLAPIS TechnologyRUM002N05GT2LLAPIS TechnologyRUM002N02T2L MOSLAPIS TechnologyRUM003N02CJRUM003N02 T2LLAPIS TechnologyRUM002N02GT2LLAPIS TechnologyRUM003N02GLAPIS Technology| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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