RTL020P02TR Tech Spezifikatioune
Rohm Semiconductor - RTL020P02TR technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Rohm Semiconductor - RTL020P02TR
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | LAPIS Technology | |
| Vgs (th) (Max) @ Id | 2V @ 1mA | |
| Vgs (Max) | ±12V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TUMT6 | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 135mOhm @ 2A, 4.5V | |
| Power Dissipation (Max) | 1W (Ta) | |
| Package / Case | 6-SMD, Flat Leads | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | 150°C | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 430 pF @ 10 V | |
| Gate Charge (Qg) (Max) @ Vgs | 4.9 nC @ 4.5 V | |
| FET Typ | P-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
| Entworf fir Source Voltage (Vdss) | 20 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2A (Ta) | |
| Basis Produktnummer | RTL020 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Rohm Semiconductor RTL020P02TR.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | RTL020P02TR | RTL030P02TR | RTL035N03TR | RTL2810-GR |
| Hiersteller | Rohm Semiconductor | Rohm Semiconductor | Rohm Semiconductor | REALTEK |
| Basis Produktnummer | RTL020 | RTL030 | RTL035 | - |
| Package / Case | 6-SMD, Flat Leads | 6-SMD, Flat Leads | 6-SMD, Flat Leads | - |
| Power Dissipation (Max) | 1W (Ta) | 1W (Ta) | 1W (Ta) | - |
| FET Typ | P-Channel | P-Channel | N-Channel | - |
| Supplier Device Package | TUMT6 | TUMT6 | TUMT6 | - |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | - |
| Serie | - | - | - | - |
| Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 4.5V | 2.5V, 4.5V | 2.5V, 4.5V | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2A (Ta) | 3A (Ta) | 3.5A (Ta) | - |
| FET Feature | - | - | - | - |
| Operatioun Temperatur | 150°C | 150°C (TJ) | 150°C (TJ) | - |
| Input Capacitance (Ciss) (Max) @ Vds | 430 pF @ 10 V | 760 pF @ 10 V | 350 pF @ 10 V | - |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | - |
| Gate Charge (Qg) (Max) @ Vgs | 4.9 nC @ 4.5 V | 8 nC @ 4.5 V | 6.4 nC @ 4.5 V | - |
| Rds On (Max) @ Id, Vgs | 135mOhm @ 2A, 4.5V | 70mOhm @ 3A, 4.5V | 56mOhm @ 3.5A, 4.5V | - |
| Vgs (th) (Max) @ Id | 2V @ 1mA | 2V @ 1mA | 1.5V @ 1mA | - |
| Entworf fir Source Voltage (Vdss) | 20 V | 20 V | 30 V | - |
| Vgs (Max) | ±12V | ±12V | ±12V | - |
Eroflueden RTL020P02TR PDF DataDhusts an Rohm Semiconductor Dokumentatioun fir RTL020P02TR - Rohm Semiconductor.
RTL2810-GRREALTEKRTL2830-VB-GRREALTEKRTL030P02/TRLAPIS TechnologyRTL030P02TRRohm SemiconductorMOSFET P-CH 20V 3A TUMT6RTL035N03 TCRLAPIS TechnologyRTL204601NOIGBT ModuleRTL035N03/TRLAPIS TechnologyRTL035N03TRRohm SemiconductorMOSFET N-CH 30V 3.5A TUMT6RTL204688/01TOYOCOMRTL2810REALTTERTL030P02LAPIS TechnologyRTL020P02/TRLAPIS TechnologyRTL035N03TR MOSLAPIS TechnologyRTL2830REALTEKRTL2830-GRREALTEKRTL020P02LAPIS TechnologyRTL205002/01-10M0VECTRONRTL035N03LAPIS Technology| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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