RFNL15TJ6SGC9 Tech Spezifikatioune
Rohm Semiconductor - RFNL15TJ6SGC9 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Rohm Semiconductor - RFNL15TJ6SGC9
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | LAPIS Technology | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.3 V @ 15 A | |
| Voltage - DC Reverse (Vr) (Max) | 600 V | |
| Technologie | Standard | |
| Supplier Device Package | TO-220ACFP | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Serie | - | |
| Reverse Recovery Time (trr) | 160 ns |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | TO-220-2 Full Pack | |
| Package protegéieren | Tube | |
| Operatiounstemperatur - Junction | 150°C | |
| Mounting Type | Through Hole | |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 600 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 15A | |
| Capacitance @ Vr, F. | - | |
| Basis Produktnummer | RFNL15 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Rohm Semiconductor RFNL15TJ6SGC9.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | RFNL15TJ6SGC9 | RFN5BM3STL | RFN5B6STL | RFN3BM6STL |
| Hiersteller | Rohm Semiconductor | Rohm Semiconductor | Rohm Semiconductor | Rohm Semiconductor |
| Basis Produktnummer | RFNL15 | RFN5B | RFN5B | RFN3B |
| Voltage - DC Reverse (Vr) (Max) | 600 V | 350 V | 600 V | 600 V |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Package / Case | TO-220-2 Full Pack | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Technologie | Standard | Standard | Standard | Standard |
| Supplier Device Package | TO-220ACFP | TO-252 | CPD | TO-252 |
| Serie | - | - | - | - |
| Reverse Recovery Time (trr) | 160 ns | 30 ns | 50 ns | 30 ns |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 15A | 5A | 5A | 3A |
| Voltage - Viru (Vf) (Max) @ Wann | 1.3 V @ 15 A | 1.5 V @ 5 A | 1.55 V @ 5 A | 1.55 V @ 3 A |
| Capacitance @ Vr, F. | - | - | - | - |
| Mounting Type | Through Hole | Surface Mount | Surface Mount | Surface Mount |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 600 V | 10 µA @ 350 V | 10 µA @ 600 V | 10 µA @ 600 V |
| Operatiounstemperatur - Junction | 150°C | 150°C (Max) | 150°C (Max) | 150°C (Max) |
| Package protegéieren | Tube | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
RFNL10TJ6SLAPIS TechnologyRFN5BM3STLRohm SemiconductorDIODE GEN PURP 350V 5A TO252RFN5B6STLRohm SemiconductorDIODE GEN PURP 600V 5A CPDRFN5B3SLAPIS TechnologyRFND4-31GFMITELRFN30TS6DGC11Rohm SemiconductorDIODE ARRAY GP 600V 15A TO247RFN30TS6SGLAPIS Technology
RFNTF1608060BM1TDBWalsin TechnologyRFN3BM6STLRohm SemiconductorDIODE GEN PURP 600V 3A TO252RFNL10BM6STLLAPIS Technology
RFNL5BGE6STLRohm SemiconductorDIODE GEN PURP 600V 5A TO252RFN5B2STLRohm SemiconductorDIODE GEN PURP 5A CPDRFNL10TJ6SGC9Rohm SemiconductorDIODE GP 600V 10A TO220ACFPRFN3BM2STLRohm SemiconductorDIODE GEN PURP 200V 3A TO252RFN5BM6STLRohm SemiconductorDIODE GEN PURP 600V 5A TO252RFN3BGE6STLRohm SemiconductorDIODE GEN PURP 600V 3A TO252RFNL15TJ6SLAPIS TechnologyRFN5BM3S FHHTLLAPIS Technology| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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