RF2001T3D Tech Spezifikatioune
Rohm Semiconductor - RF2001T3D technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Rohm Semiconductor - RF2001T3D
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | LAPIS Technology | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.3 V @ 10 A | |
| Voltage - DC Reverse (Vr) (Max) | 300 V | |
| Technologie | Standard | |
| Supplier Device Package | TO-220FN | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Serie | - | |
| Reverse Recovery Time (trr) | 25 ns |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | TO-220-3 Full Pack | |
| Package protegéieren | Bulk | |
| Operatiounstemperatur - Junction | 150°C (Max) | |
| Mounting Type | Through Hole | |
| Diode Configuration | 1 Pair Common Cathode | |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 300 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) (pro Diode) | 10A | |
| Basis Produktnummer | RF2001 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Rohm Semiconductor RF2001T3D.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | RF2001T3D | RF2001NS2DFHTL | RF2001T2D | RF2001NS3DTL |
| Hiersteller | Rohm Semiconductor | Rohm Semiconductor | Rohm Semiconductor | Rohm Semiconductor |
| Reverse Recovery Time (trr) | 25 ns | 30 ns | 30 ns | - |
| Diode Configuration | 1 Pair Common Cathode | 1 Pair Common Cathode | 1 Pair Common Cathode | 1 Pair Common Cathode |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Voltage - Viru (Vf) (Max) @ Wann | 1.3 V @ 10 A | 930 mV @ 10 A | 930 mV @ 10 A | - |
| Mounting Type | Through Hole | Surface Mount | Through Hole | Surface Mount |
| Package protegéieren | Bulk | Tape & Reel (TR) | Bulk | Tape & Reel (TR) |
| Voltage - DC Reverse (Vr) (Max) | 300 V | 200 V | 200 V | 300 V |
| Aktuell - Reverse Leakage @ Vr | 10 µA @ 300 V | 10 µA @ 200 V | 10 µA @ 200 V | - |
| Basis Produktnummer | RF2001 | RF2001 | RF2001 | RF2001 |
| Operatiounstemperatur - Junction | 150°C (Max) | 150°C (Max) | 150°C (Max) | 150°C (Max) |
| Package / Case | TO-220-3 Full Pack | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-220-3 Full Pack | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Supplier Device Package | TO-220FN | LPDS | TO-220FN | LPDS |
| Aktuell - duerchschnëttlech rektifizéiert (Io) (pro Diode) | 10A | 20A | 10A | 20A |
| Technologie | Standard | Standard | Standard | Standard |
| Serie | - | Automotive, AEC-Q101 | - | - |
RF2012-000Hamlin / LittelfuseRF2001NS3DROMHRF201L2SLAPIS TechnologyRF201L2S DD-TE25LAPIS Technology
RF201L2SDDTE25Rohm SemiconductorDIODE GEN PURP 200V 2A PMDSRF2001NS3SWTLLAPIS TechnologyRF2001NS3DFHLAPIS TechnologyRF201L2S-TE25LAPIS TechnologyRF2010ERICSSONRF2001NS3SWLAPIS TechnologyRF2001NS3SW TLLAPIS TechnologyRF2001NS2DFHTLRohm SemiconductorSUPER FAST RECOVERY DIODE (AEC-QRF2001NS3D TLLAPIS TechnologyRF2001T2DRohm SemiconductorDIODE ARRAY GP 200V 10A TO220FNRF2001NS3DTLRohm SemiconductorDIODE ARRAY GP 300V 20A LPDSRF2001T4SRohm SemiconductorDIODE GEN PURP 400V 20A TO220FNRF201L2STE25Rohm SemiconductorDIODE GEN PURP 200V 2A PMDSRF201L4SLAPIS Technology| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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