RE1C002ZPTL Tech Spezifikatioune
Rohm Semiconductor - RE1C002ZPTL technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Rohm Semiconductor - RE1C002ZPTL
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | LAPIS Technology | |
Vgs (th) (Max) @ Id | 1V @ 100µA | |
Vgs (Max) | ±10V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | EMT3F (SOT-416FL) | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 1.2Ohm @ 200mA, 4.5V | |
Power Dissipation (Max) | 150mW (Ta) | |
Package / Case | SC-89, SOT-490 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -40°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 115 pF @ 10 V | |
Gate Charge (Qg) (Max) @ Vgs | 1.4 nC @ 4.5 V | |
FET Typ | P-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V | |
Entworf fir Source Voltage (Vdss) | 20 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 200mA (Ta) | |
Basis Produktnummer | RE1C002 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Rohm Semiconductor RE1C002ZPTL.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | RE1C002ZPTL | RE1C002ZPMGTL | RE1C001ZPTL | RE1C002UNTCL |
Hiersteller | Rohm Semiconductor | Rohm Semiconductor | Rohm Semiconductor | Rohm Semiconductor |
Package protegéieren | Tape & Reel (TR) | - | Tape & Reel (TR) | Tape & Reel (TR) |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V | 1.2V, 4.5V | 1.2V, 4.5V | 1.2V, 2.5V |
Basis Produktnummer | RE1C002 | - | RE1C001 | RE1C002 |
Supplier Device Package | EMT3F (SOT-416FL) | EMT3F (SOT-416FL) | EMT3F (SOT-416FL) | EMT3F (SOT-416FL) |
FET Feature | - | - | - | - |
Power Dissipation (Max) | 150mW (Ta) | 150W (Ta) | 150mW (Ta) | 150mW (Ta) |
Input Capacitance (Ciss) (Max) @ Vds | 115 pF @ 10 V | 115 pF @ 10 V | 15 pF @ 10 V | 25 pF @ 10 V |
Operatioun Temperatur | -40°C ~ 150°C (TJ) | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Entworf fir Source Voltage (Vdss) | 20 V | 20 V | 20 V | 20 V |
Serie | - | - | - | - |
FET Typ | P-Channel | P-Channel | P-Channel | N-Channel |
Vgs (th) (Max) @ Id | 1V @ 100µA | 1V @ 100µA | 1V @ 100µA | 1V @ 1mA |
Rds On (Max) @ Id, Vgs | 1.2Ohm @ 200mA, 4.5V | 1.2Ohm @ 200mA, 4.5V | 3.8Ohm @ 100mA, 4.5V | 1.2Ohm @ 100mA, 2.5V |
Vgs (Max) | ±10V | ±10V | ±10V | ±8V |
Gate Charge (Qg) (Max) @ Vgs | 1.4 nC @ 4.5 V | 1.4 nC @ 4.5 V | - | - |
Package / Case | SC-89, SOT-490 | SC-89, SOT-490 | SC-89, SOT-490 | SC-89, SOT-490 |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 200mA (Ta) | 200mA (Ta) | 100mA (Ta) | 200mA (Ta) |
Eroflueden RE1C002ZPTL PDF DataDhusts an Rohm Semiconductor Dokumentatioun fir RE1C002ZPTL - Rohm Semiconductor.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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