R8002ANX Tech Spezifikatioune
Rohm Semiconductor - R8002ANX technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Rohm Semiconductor - R8002ANX
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | LAPIS Technology | |
Vgs (th) (Max) @ Id | 5V @ 1mA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220FM | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 4.3Ohm @ 1A, 10V | |
Power Dissipation (Max) | 35W (Tc) | |
Package / Case | TO-220-3 Full Pack | |
Package protegéieren | Bulk |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 210 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 12.7 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 800 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2A (Tc) | |
Basis Produktnummer | R8002 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Rohm Semiconductor R8002ANX.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | R8002ANX | R8005ANX | R8007AND3FRATL | R8008ANX |
Hiersteller | Rohm Semiconductor | Rohm Semiconductor | Rohm Semiconductor | Rohm Semiconductor |
Package protegéieren | Bulk | Bulk | Tape & Reel (TR) | Bulk |
Entworf fir Source Voltage (Vdss) | 800 V | 800 V | 800 V | 800 V |
Gate Charge (Qg) (Max) @ Vgs | 12.7 nC @ 10 V | 21 nC @ 10 V | 28 nC @ 10 V | 39 nC @ 10 V |
Mounting Type | Through Hole | Through Hole | Surface Mount | Through Hole |
Serie | - | - | Automotive, AEC-Q101 | - |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Supplier Device Package | TO-220FM | TO-220FM | TO-252 | TO-220FM |
Package / Case | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-220-3 Full Pack |
Input Capacitance (Ciss) (Max) @ Vds | 210 pF @ 25 V | 485 pF @ 25 V | 850 pF @ 25 V | 1080 pF @ 25 V |
Vgs (th) (Max) @ Id | 5V @ 1mA | 5V @ 1mA | 5V @ 1mA | 5V @ 1mA |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Basis Produktnummer | R8002 | R8005 | R8007 | R8008 |
Rds On (Max) @ Id, Vgs | 4.3Ohm @ 1A, 10V | 2.08Ohm @ 2.5A, 10V | 1.6Ohm @ 3.5A, 10V | 1.03Ohm @ 4A, 10V |
Vgs (Max) | ±30V | ±30V | ±30V | ±30V |
Power Dissipation (Max) | 35W (Tc) | 40W (Tc) | 140W (Tc) | 50W (Tc) |
FET Feature | - | - | - | - |
Operatioun Temperatur | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2A (Tc) | 5A (Tc) | 7A (Tc) | 8A (Ta) |
Eroflueden R8002ANX PDF DataDhusts an Rohm Semiconductor Dokumentatioun fir R8002ANX - Rohm Semiconductor.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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