R6047ENZ1C9 Tech Spezifikatioune
Rohm Semiconductor - R6047ENZ1C9 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Rohm Semiconductor - R6047ENZ1C9
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | LAPIS Technology | |
| Vgs (th) (Max) @ Id | 4V @ 1mA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-247 | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 72mOhm @ 25.8A, 10V | |
| Power Dissipation (Max) | 120W (Tc) | |
| Package / Case | TO-247-3 | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 3850 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 145 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 600 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 47A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Rohm Semiconductor R6047ENZ1C9.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | R6047ENZ1C9 | R6035KNZ1C9 | R6035ENZ1C9 | R6076MNZ1C9 |
| Hiersteller | Rohm Semiconductor | Rohm Semiconductor | Rohm Semiconductor | Rohm Semiconductor |
| Gate Charge (Qg) (Max) @ Vgs | 145 nC @ 10 V | 72 nC @ 10 V | 110 nC @ 10 V | 115 nC @ 10 V |
| FET Feature | - | - | - | - |
| Input Capacitance (Ciss) (Max) @ Vds | 3850 pF @ 25 V | 3000 pF @ 25 V | 2720 pF @ 25 V | 7000 pF @ 25 V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 47A (Tc) | 35A (Tc) | 35A (Tc) | 76A (Tc) |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Rds On (Max) @ Id, Vgs | 72mOhm @ 25.8A, 10V | 102mOhm @ 18.1A, 10V | 102mOhm @ 18.1A, 10V | 55mOhm @ 38A, 10V |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Serie | - | - | - | - |
| Operatioun Temperatur | 150°C (TJ) | -55°C ~ 150°C (TJ) | 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Vgs (Max) | ±20V | ±20V | ±20V | ±30V |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Package protegéieren | Tube | Tube | Tube | Tube |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Power Dissipation (Max) | 120W (Tc) | 379W (Tc) | 120W (Tc) | 740W (Tc) |
| Entworf fir Source Voltage (Vdss) | 600 V | 600 V | 600 V | 600 V |
| Supplier Device Package | TO-247 | TO-247 | TO-247 | TO-247 |
| Vgs (th) (Max) @ Id | 4V @ 1mA | 5V @ 1mA | 4V @ 1mA | 5V @ 1mA |
Eroflueden R6047ENZ1C9 PDF DataDhusts an Rohm Semiconductor Dokumentatioun fir R6047ENZ1C9 - Rohm Semiconductor.
R6076ENZ4C13 MOSLAPIS Technology
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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