EM6J1T2R Tech Spezifikatioune
Rohm Semiconductor - EM6J1T2R technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Rohm Semiconductor - EM6J1T2R
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | LAPIS Technology | |
| Vgs (th) (Max) @ Id | 1V @ 100µA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | EMT6 | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 200mA, 4.5V | |
| Power - Max | 150mW | |
| Package / Case | SOT-563, SOT-666 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 115pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 1.4nC @ 4.5V | |
| FET Feature | Logic Level Gate | |
| Entworf fir Source Voltage (Vdss) | 20V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 200mA | |
| Konfiguratioun | 2 P-Channel (Dual) | |
| Basis Produktnummer | EM6J1 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Rohm Semiconductor EM6J1T2R.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | EM6J1T2R | EM6K31T2R | EM6K1T2R | EM6K31GT2R |
| Hiersteller | Rohm Semiconductor | Rohm Semiconductor | Rohm Semiconductor | Rohm Semiconductor |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Power - Max | 150mW | 150mW | 150mW | 120mW |
| FET Feature | Logic Level Gate | Logic Level Gate | Logic Level Gate | Logic Level Gate, 2.5V Drive |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 200mA | 250mA | 100mA | 250mA |
| Package / Case | SOT-563, SOT-666 | SOT-563, SOT-666 | SOT-563, SOT-666 | SOT-563, SOT-666 |
| Serie | - | - | - | - |
| Basis Produktnummer | EM6J1 | EM6K31 | EM6K1 | EM6K31 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | EMT6 | EMT6 | EMT6 | EMT6 |
| Operatioun Temperatur | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) | 150°C (TJ) |
| Konfiguratioun | 2 P-Channel (Dual) | 2 N-Channel (Dual) | 2 N-Channel (Dual) | 2 N-Channel (Dual) |
| Input Capacitance (Ciss) (Max) @ Vds | 115pF @ 10V | 15pF @ 25V | 13pF @ 5V | 15pF @ 25V |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 200mA, 4.5V | 2.4Ohm @ 250mA, 10V | 8Ohm @ 10mA, 4V | 2.4Ohm @ 250mA, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 1.4nC @ 4.5V | - | - | - |
| Entworf fir Source Voltage (Vdss) | 20V | 60V | 30V | 60V |
| Vgs (th) (Max) @ Id | 1V @ 100µA | 2.3V @ 1mA | 1.5V @ 100µA | 2.3V @ 1mA |
Eroflueden EM6J1T2R PDF DataDhusts an Rohm Semiconductor Dokumentatioun fir EM6J1T2R - Rohm Semiconductor.
EM6K31 T2RLAPIS TechnologyEM6K1 T2RLAPIS Technology
EM6GE16EWXD-12IHEtron TechnologyEM6HE16EWXD-12HEtron TechnologyEM6HD16EWKG-15IHEtron TechnologyEM6J1 T2RLAPIS TechnologyEM6GE16EWXD-12HETRONTEEM6J1GT2RLAPIS TechnologyEM6K31T2RRohm SemiconductorMOSFET 2N-CH 60V 0.25A EMT6EM6K1GT2RLAPIS TechnologyEM6HE08EW8D-12HEtron TechnologyEM6K1T2R MOSLAPIS TechnologyEM6K1ZET2RLAPIS TechnologyEM6K1T2RRohm SemiconductorMOSFET 2N-CH 30V .1A EMT6EM6HD16EWBH-12IHEtron TechnologyEM6HD16EWKG-12HEtron TechnologyEM6K31GT2RRohm SemiconductorMOSFET 2N-CH 60V 0.25A EMT6EM6K33 T2RLAPIS Technology| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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