IXTH4N150 Tech Spezifikatioune
IXYS - IXTH4N150 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu IXYS - IXTH4N150
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | IXYS Corporation | |
Vgs (th) (Max) @ Id | 5V @ 250µA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-247 (IXTH) | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 6Ohm @ 2A, 10V | |
Power Dissipation (Max) | 280W (Tc) | |
Package / Case | TO-247-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 1576 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 44.5 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 1500 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4A (Tc) | |
Basis Produktnummer | IXTH4 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu IXYS IXTH4N150.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IXTH4N150 | IXTH60N10 | IXTH50P085 | IXTH50P10 |
Hiersteller | IXYS | IXYS | IXYS | IXYS |
Power Dissipation (Max) | 280W (Tc) | 300W (Tc) | 300W (Tc) | 300W (Tc) |
Entworf fir Source Voltage (Vdss) | 1500 V | 100 V | 85 V | 100 V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Serie | - | - | - | - |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Package / Case | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
Supplier Device Package | TO-247 (IXTH) | TO-247 (IXTH) | TO-247 (IXTH) | TO-247 (IXTH) |
Package protegéieren | Tube | Tube | Tube | Tube |
Input Capacitance (Ciss) (Max) @ Vds | 1576 pF @ 25 V | 3200 pF @ 25 V | 4200 pF @ 25 V | 4350 pF @ 25 V |
Vgs (Max) | ±30V | ±20V | ±20V | ±20V |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Vgs (th) (Max) @ Id | 5V @ 250µA | 4V @ 250µA | 5V @ 250µA | 5V @ 250µA |
FET Feature | - | - | - | - |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4A (Tc) | 60A (Tc) | 50A (Tc) | 50A (Tc) |
Basis Produktnummer | IXTH4 | IXTH60 | IXTH50 | IXTH50 |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Rds On (Max) @ Id, Vgs | 6Ohm @ 2A, 10V | 20mOhm @ 30A, 10V | 55mOhm @ 25A, 10V | 55mOhm @ 25A, 10V |
FET Typ | N-Channel | N-Channel | P-Channel | P-Channel |
Gate Charge (Qg) (Max) @ Vgs | 44.5 nC @ 10 V | 110 nC @ 10 V | 150 nC @ 10 V | 140 nC @ 10 V |
Eroflueden IXTH4N150 PDF DataDhusts an IXYS Dokumentatioun fir IXTH4N150 - IXYS.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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