IXFP7N100P Tech Spezifikatioune
IXYS - IXFP7N100P technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu IXYS - IXFP7N100P
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | IXYS Corporation | |
Vgs (th) (Max) @ Id | 6V @ 1mA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220-3 | |
Serie | HiPerFET™, Polar | |
Rds On (Max) @ Id, Vgs | 1.9Ohm @ 3.5A, 10V | |
Power Dissipation (Max) | 300W (Tc) | |
Package / Case | TO-220-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 2590 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 1000 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 7A (Tc) | |
Basis Produktnummer | IXFP7N100 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu IXYS IXFP7N100P.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IXFP7N100P | IXFP76N15T2 | IXFP4N100PM | IXFQ20N50P3 |
Hiersteller | IXYS | IXYS | IXYS | IXYS |
Vgs (th) (Max) @ Id | 6V @ 1mA | 4.5V @ 250µA | 6V @ 250µA | 5V @ 1.5mA |
Entworf fir Source Voltage (Vdss) | 1000 V | 150 V | 1000 V | 500 V |
Gate Charge (Qg) (Max) @ Vgs | 47 nC @ 10 V | 97 nC @ 10 V | 26 nC @ 10 V | 36 nC @ 10 V |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Power Dissipation (Max) | 300W (Tc) | 350W (Tc) | 40W (Tc) | 380W (Tc) |
Supplier Device Package | TO-220-3 | TO-220-3 | TO-220 Isolated Tab | TO-3P |
Rds On (Max) @ Id, Vgs | 1.9Ohm @ 3.5A, 10V | 20mOhm @ 38A, 10V | 3.3Ohm @ 2A, 10V | 300mOhm @ 10A, 10V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Input Capacitance (Ciss) (Max) @ Vds | 2590 pF @ 25 V | 5800 pF @ 25 V | 1456 pF @ 25 V | 1800 pF @ 25 V |
FET Feature | - | - | - | - |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 7A (Tc) | 76A (Tc) | 2.1A (Tc) | 20A (Tc) |
Package / Case | TO-220-3 | TO-220-3 | TO-220-3 Full Pack, Isolated Tab | TO-3P-3, SC-65-3 |
Vgs (Max) | ±30V | ±20V | ±20V | ±30V |
Basis Produktnummer | IXFP7N100 | IXFP76 | IXFP4N100 | IXFQ20 |
Package protegéieren | Tube | Tube | Tube | Tube |
Serie | HiPerFET™, Polar | HiPerFET™, TrenchT2™ | HiPerFET™, Polar | HiPerFET™, Polar3™ |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Eroflueden IXFP7N100P PDF DataDhusts an IXYS Dokumentatioun fir IXFP7N100P - IXYS.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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