IXFP6N120P Tech Spezifikatioune
IXYS - IXFP6N120P technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu IXYS - IXFP6N120P
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | IXYS Corporation | |
Vgs (th) (Max) @ Id | 5V @ 1mA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-220-3 | |
Serie | HiPerFET™, Polar | |
Rds On (Max) @ Id, Vgs | 2.4Ohm @ 500mA, 10V | |
Power Dissipation (Max) | 250W (Tc) | |
Package / Case | TO-220-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 2830 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 92 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 1200 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6A (Tc) | |
Basis Produktnummer | IXFP6N120 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu IXYS IXFP6N120P.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IXFP6N120P | IXFP34N65X2M | IXFP8N85X | IXFP60N25X3 |
Hiersteller | IXYS | IXYS | IXYS | IXYS |
Power Dissipation (Max) | 250W (Tc) | 40W (Tc) | 200W (Tc) | 320W (Tc) |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Package protegéieren | Tube | Tube | Tube | Tube |
Serie | HiPerFET™, Polar | HiPerFET™, Ultra X2 | HiPerFET™, Ultra X | HiPerFET™, Ultra X3 |
Package / Case | TO-220-3 | TO-220-3 Full Pack, Isolated Tab | TO-220-3 | TO-220-3 |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Input Capacitance (Ciss) (Max) @ Vds | 2830 pF @ 25 V | 3230 pF @ 25 V | 654 pF @ 25 V | 3610 pF @ 25 V |
Gate Charge (Qg) (Max) @ Vgs | 92 nC @ 10 V | 56 nC @ 10 V | 17 nC @ 10 V | 50 nC @ 10 V |
Vgs (th) (Max) @ Id | 5V @ 1mA | 5V @ 1.5mA | 5.5V @ 250µA | 4.5V @ 1.5mA |
Vgs (Max) | ±30V | ±30V | ±30V | ±20V |
Supplier Device Package | TO-220-3 | TO-220 Isolated Tab | TO-220AB (IXFP) | TO-220AB (IXFP) |
Rds On (Max) @ Id, Vgs | 2.4Ohm @ 500mA, 10V | 100mOhm @ 17A, 10V | 850mOhm @ 4A, 10V | 23mOhm @ 30A, 10V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6A (Tc) | 34A (Tc) | 8A (Tc) | 60A (Tc) |
Entworf fir Source Voltage (Vdss) | 1200 V | 650 V | 850 V | 250 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
FET Feature | - | - | - | - |
Basis Produktnummer | IXFP6N120 | IXFP34 | IXFP8N85 | IXFP60 |
Eroflueden IXFP6N120P PDF DataDhusts an IXYS Dokumentatioun fir IXFP6N120P - IXYS.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.