IRF620B Tech Spezifikatioune
Fairchild Semiconductor - IRF620B technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - IRF620B
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Fairchild (onsemi) | |
| Vgs (th) (Max) @ Id | 4V @ 250µA | |
| Vgs (Max) | ±30V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-220 | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 2.5A, 10V | |
| Power Dissipation (Max) | 47W (Tc) | |
| Package / Case | TO-220-3 | |
| Package protegéieren | Bulk |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 390 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 200 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 5A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor IRF620B.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | IRF620B | IRF620PBF | IRF620 | IRF620S |
| Hiersteller | Fairchild Semiconductor | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
| Supplier Device Package | TO-220 | TO-220AB | TO-220AB | D²PAK (TO-263) |
| Mounting Type | Through Hole | Through Hole | Through Hole | Surface Mount |
| Power Dissipation (Max) | 47W (Tc) | 50W (Tc) | 50W (Tc) | 3W (Ta), 50W (Tc) |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 2.5A, 10V | 800mOhm @ 3.1A, 10V | 800mOhm @ 3.1A, 10V | 800mOhm @ 3.1A, 10V |
| Serie | - | - | - | - |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -65°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| FET Feature | - | - | - | - |
| Package protegéieren | Bulk | Tube | Tube | Tube |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V | 14 nC @ 10 V | 14 nC @ 10 V | 14 nC @ 10 V |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 5A (Tc) | 5.2A (Tc) | 5.2A (Tc) | 5.2A (Tc) |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Vgs (Max) | ±30V | ±20V | ±20V | ±20V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
| Input Capacitance (Ciss) (Max) @ Vds | 390 pF @ 25 V | 260 pF @ 25 V | 260 pF @ 25 V | 260 pF @ 25 V |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Entworf fir Source Voltage (Vdss) | 200 V | 200 V | 200 V | 200 V |
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IRF620FISTMicroelectronicsIRF620BPBFFCSIRF620AFSCIRF620S MOSIRIRF6201PBF MOSIRIRF620STRPBFIRIRF620 SECSECIRF620SVishay SiliconixMOSFET N-CH 200V 5.2A D2PAKIRF620Harris Corporation5.0A 200V 0.800 OHM N-CHANNEL
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IRF620STMicroelectronicsMOSFET N-CH 200V 6A TO220AB
IRF6201TRPBFInfineon TechnologiesMOSFET N-CH 20V 27A 8SOIRF620PBF MOSElectro-Films (EFI) / Vishay| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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