EGP30C Tech Spezifikatioune
Fairchild Semiconductor - EGP30C technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - EGP30C
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Fairchild (onsemi) | |
| Voltage - Viru (Vf) (Max) @ Wann | 950 mV @ 3 A | |
| Voltage - DC Reverse (Vr) (Max) | 150 V | |
| Technologie | Standard | |
| Supplier Device Package | DO-201AD | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Serie | - | |
| Reverse Recovery Time (trr) | 50 ns |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | DO-201AD, Axial | |
| Package protegéieren | Bulk | |
| Operatiounstemperatur - Junction | -65°C ~ 150°C | |
| Mounting Type | Through Hole | |
| Aktuell - Reverse Leakage @ Vr | 5 µA @ 150 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 3A | |
| Capacitance @ Vr, F. | 95pF @ 4V, 1MHz |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor EGP30C.
| Produktiounsattriff |  |
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|
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|---|---|---|---|---|
| Part Number | EGP30C | EGP30G | EGP20G | EGP50C-E3/54 |
| Hiersteller | Fairchild Semiconductor | Fairchild Semiconductor | Fairchild Semiconductor | Vishay General Semiconductor - Diodes Division |
| Voltage - DC Reverse (Vr) (Max) | 150 V | 400 V | 400 V | 150 V |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Reverse Recovery Time (trr) | 50 ns | 50 ns | 50 ns | 50 ns |
| Voltage - Viru (Vf) (Max) @ Wann | 950 mV @ 3 A | 1.25 V @ 3 A | 1.25 V @ 2 A | 950 mV @ 5 A |
| Package protegéieren | Bulk | Bulk | Bulk | Tape & Reel (TR) |
| Capacitance @ Vr, F. | 95pF @ 4V, 1MHz | 75pF @ 4V, 1MHz | 45pF @ 4V, 1MHz | 95pF @ 4V, 1MHz |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 3A | 3A | 2A | 5A |
| Package / Case | DO-201AD, Axial | DO-201AD, Axial | DO-204AC, DO-15, Axial | DO-201AA, DO-27, Axial |
| Supplier Device Package | DO-201AD | DO-201AD | DO-15 | GP20 |
| Technologie | Standard | Standard | Standard | Standard |
| Aktuell - Reverse Leakage @ Vr | 5 µA @ 150 V | 5 µA @ 400 V | 5 µA @ 400 V | 5 µA @ 150 V |
| Serie | - | - | - | SUPERECTIFIER® |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) |
| Operatiounstemperatur - Junction | -65°C ~ 150°C | -65°C ~ 150°C | -65°C ~ 150°C | -65°C ~ 150°C |
EGP30GFairchild SemiconductorRECTIFIER DIODE, 3A, 400V, DO-20EGP20GFairchild SemiconductorDIODE GEN PURP 400V 2A DO15EGP30G T/BZOWIEEGP50C-E3/54Vishay General Semiconductor - Diodes DivisionDIODE GEN PURP 150V 5A GP20
EGP20G-E3/73Vishay General Semiconductor - Diodes DivisionDIODE GEN PURP 400V 2A DO204ACEGP20G-E3/54Vishay General Semiconductor - Diodes DivisionDIODE GEN PURP 400V 2A DO204AC
EGP26-13AFujitsu Electronics America, Inc.IGBT ModuleEGP30G-E3/73Vishay General Semiconductor - Diodes DivisionDIODE GEN PURP 400V 3A GP20EGP20JFairchild SemiconductorDIODE GEN PURP 600V 2A DO15
EGP20GonsemiDIODE GEN PURP 400V 2A DO15
EGP30DonsemiDIODE GEN PURP 200V 3A DO201ADEGP30GonsemiDIODE GEN PURP 400V 3A DO201ADEGP20JonsemiDIODE GEN PURP 600V 2A DO15
EGP30JonsemiDIODE GEN PURP 600V 3A DO201ADEGP30ConsemiDIODE GEN PURP 150V 3A DO201ADEGP30DL-6486GSEGP30DL-6085GS
EGP20G-E3Electro-Films (EFI) / Vishay| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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