1N5399 Tech Spezifikatioune
Fairchild Semiconductor - 1N5399 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Fairchild Semiconductor - 1N5399
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Fairchild (onsemi) | |
| Voltage - Viru (Vf) (Max) @ Wann | 1.4 V @ 1.5 A | |
| Voltage - DC Reverse (Vr) (Max) | 1000 V | |
| Technologie | Standard | |
| Supplier Device Package | DO-15 | |
| Speed | Standard Recovery >500ns, > 200mA (Io) | |
| Serie | - |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package / Case | DO-204AC, DO-15, Axial | |
| Package protegéieren | Bulk | |
| Operatiounstemperatur - Junction | -55°C ~ 150°C | |
| Mounting Type | Through Hole | |
| Aktuell - Reverse Leakage @ Vr | 5 µA @ 1000 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 1.5A | |
| Capacitance @ Vr, F. | 25pF @ 4V, 1MHz |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Fairchild Semiconductor 1N5399.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | 1N5399 | 1N5400 | 1N5398 | 1N5399-E3/54 |
| Hiersteller | Fairchild Semiconductor | onsemi | onsemi | Vishay General Semiconductor - Diodes Division |
| Operatiounstemperatur - Junction | -55°C ~ 150°C | -55°C ~ 150°C | -55°C ~ 150°C | -50°C ~ 150°C |
| Capacitance @ Vr, F. | 25pF @ 4V, 1MHz | 30pF @ 4V, 1MHz | 25pF @ 4V, 1MHz | 15pF @ 4V, 1MHz |
| Supplier Device Package | DO-15 | DO-201AD | DO-15 | DO-204AL (DO-41) |
| Package / Case | DO-204AC, DO-15, Axial | DO-201AD, Axial | DO-204AC, DO-15, Axial | DO-204AL, DO-41, Axial |
| Package protegéieren | Bulk | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Technologie | Standard | Standard | Standard | Standard |
| Voltage - DC Reverse (Vr) (Max) | 1000 V | 50 V | 800 V | 1000 V |
| Speed | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) | Standard Recovery >500ns, > 200mA (Io) |
| Aktuell - Reverse Leakage @ Vr | 5 µA @ 1000 V | 5 µA @ 50 V | 5 µA @ 800 V | 5 µA @ 1000 V |
| Voltage - Viru (Vf) (Max) @ Wann | 1.4 V @ 1.5 A | 1.2 V @ 3 A | 1.4 V @ 1.5 A | 1.4 V @ 1.5 A |
| Serie | - | - | - | - |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 1.5A | 3A | 1.5A | 1.5A |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
1N5400onsemiDIODE GEN PURP 50V 3A DO201AD1N5398onsemiDIODE GEN PURP 800V 1.5A DO151N5399-E3/54Vishay General Semiconductor - Diodes DivisionDIODE GEN PURP 1KV 1.5A DO204AL1N5398-E3/54Vishay General Semiconductor - Diodes DivisionDIODE GEN PURP 800V 1.5A DO204AL1N5399onsemiDIODE GEN PURP 1KV 1.5A DO15
1N5399Diotec SemiconductorDIODE GEN PURP 1KV 1.5A DO15
1N5399Yangjie TechnologyDIODE GEN PURP 1KV 1.5A DO151N5400NTE Electronics, IncDIODE GEN PURP 50V 3A DO201AD1N5397Diotec SemiconductorDIODE STD DO-15 600V 1.5A1N5397-E3/54Vishay General Semiconductor - Diodes DivisionDIODE GEN PURP 600V 1.5A DO204AL1N5399 T/BPANJIT1N5398NTE Electronics, IncDIODE GEN PURP 800V 1.5A DO15
1N5399GP-E3/54Vishay General Semiconductor - Diodes DivisionDIODE GEN PURP 1KV 1.5A DO204AC1N5397onsemiDIODE GEN PURP 600V 1.5A DO151N5399-E3/73Vishay General Semiconductor - Diodes DivisionDIODE GEN PURP 1KV 1.5A DO204AL1N5398Diotec SemiconductorDIODE STD DO-15 800V 1.5A1N5397NTE Electronics, IncDIODE GEN PURP 600V 1.5A DO151N5399NTE Electronics, IncDIODE GEN PURP 1KV 1.5A DO15| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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