DMHC3025LSD-13 Tech Spezifikatioune
Diodes Incorporated - DMHC3025LSD-13 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Diodes Incorporated - DMHC3025LSD-13
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Diodes Incorporated | |
Vgs (th) (Max) @ Id | 2V @ 250µA | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | 8-SO | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 25mOhm @ 5A, 10V | |
Power - Max | 1.5W | |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 590pF @ 15V | |
Gate Charge (Qg) (Max) @ Vgs | 11.7nC @ 10V | |
FET Feature | Logic Level Gate | |
Entworf fir Source Voltage (Vdss) | 30V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6A, 4.2A | |
Konfiguratioun | 2 N and 2 P-Channel (Half Bridge) | |
Basis Produktnummer | DMHC3025 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Diodes Incorporated DMHC3025LSD-13.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | DMHC3025LSD-13 | SQJ951EP-T1_GE3 | FDG6320C | STC5NF30V |
Hiersteller | Diodes Incorporated | Vishay Siliconix | onsemi | STMicroelectronics |
Serie | - | Automotive, AEC-Q101, TrenchFET® | - | STripFET™ II |
Konfiguratioun | 2 N and 2 P-Channel (Half Bridge) | 2 P-Channel (Dual) | N and P-Channel | 2 N-Channel (Dual) |
Supplier Device Package | 8-SO | PowerPAK® SO-8 Dual | SC-88 (SC-70-6) | 8-TSSOP |
Rds On (Max) @ Id, Vgs | 25mOhm @ 5A, 10V | 17mOhm @ 7.5A, 10V | 4Ohm @ 220mA, 4.5V | 31mOhm @ 2.5A, 4.5V |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Input Capacitance (Ciss) (Max) @ Vds | 590pF @ 15V | 1680pF @ 10V | 9.5pF @ 10V | 460pF @ 15V |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | PowerPAK® SO-8 Dual | 6-TSSOP, SC-88, SOT-363 | 8-TSSOP (0.173", 4.40mm Width) |
Entworf fir Source Voltage (Vdss) | 30V | 30V | 25V | 30V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Vgs (th) (Max) @ Id | 2V @ 250µA | 2.5V @ 250µA | 1.5V @ 250µA | 600mV @ 250µA |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6A, 4.2A | 30A | 220mA, 140mA | 5A |
Basis Produktnummer | DMHC3025 | SQJ951 | FDG6320 | STC5NF |
FET Feature | Logic Level Gate | - | Logic Level Gate | Logic Level Gate |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Power - Max | 1.5W | 56W | 300mW | 1.5W |
Gate Charge (Qg) (Max) @ Vgs | 11.7nC @ 10V | 50nC @ 10V | 0.4nC @ 4.5V | 11.5nC @ 4.5V |
Eroflueden DMHC3025LSD-13 PDF DataDhusts an Diodes Incorporated Dokumentatioun fir DMHC3025LSD-13 - Diodes Incorporated.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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