DMG8601UFG-7 Tech Spezifikatioune
Diodes Incorporated - DMG8601UFG-7 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Diodes Incorporated - DMG8601UFG-7
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Diodes Incorporated | |
| Vgs (th) (Max) @ Id | 1.05V @ 250µA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | U-DFN3030-8 | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 6.5A, 4.5V | |
| Power - Max | 920mW | |
| Package / Case | 8-PowerUDFN | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 143pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 8.8nC @ 4.5V | |
| FET Feature | Logic Level Gate | |
| Entworf fir Source Voltage (Vdss) | 20V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6.1A | |
| Konfiguratioun | 2 N-Channel (Dual) Common Drain | |
| Basis Produktnummer | DMG8601 |
| ATTRESSIOUN | BESCHREIWUNG |
|---|---|
| RoHs Status | |
| Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
| Erreecht Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Diodes Incorporated DMG8601UFG-7.
| Produktiounsattriff |  |
 |
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|---|---|---|---|---|
| Part Number | DMG8601UFG-7 | DMG8822UTS-13 | DMG7702SFG-13 | DMG7430LFG-7 |
| Hiersteller | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Input Capacitance (Ciss) (Max) @ Vds | 143pF @ 10V | 841pF @ 10V | 4310 pF @ 15 V | 1281 pF @ 15 V |
| Serie | - | Automotive, AEC-Q101 | - | - |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 6.5A, 4.5V | 25mOhm @ 8.2A, 4.5V | 10mOhm @ 13.5A, 10V | 11mOhm @ 20A, 10V |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6.1A | 4.9A (Ta) | 12A (Ta) | 10.5A (Ta) |
| FET Feature | Logic Level Gate | - | Schottky Diode (Body) | - |
| Supplier Device Package | U-DFN3030-8 | 8-TSSOP | PowerDI3333-8 | PowerDI3333-8 |
| Gate Charge (Qg) (Max) @ Vgs | 8.8nC @ 4.5V | 9.6nC @ 4.5V | 14.7 nC @ 10 V | 26.7 nC @ 10 V |
| Konfiguratioun | 2 N-Channel (Dual) Common Drain | 2 N-Channel (Dual) Common Drain | - | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Vgs (th) (Max) @ Id | 1.05V @ 250µA | 900mV @ 250µA | 2.5V @ 250µA | 2.5V @ 250µA |
| Power - Max | 920mW | 870mW | - | - |
| Basis Produktnummer | DMG8601 | DMG8822 | DMG7702 | DMG7430 |
| Entworf fir Source Voltage (Vdss) | 20V | 20V | 30 V | 30 V |
| Package / Case | 8-PowerUDFN | 8-TSSOP (0.173", 4.40mm Width) | 8-PowerVDFN | 8-PowerVDFN |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Eroflueden DMG8601UFG-7 PDF DataDhusts an Diodes Incorporated Dokumentatioun fir DMG8601UFG-7 - Diodes Incorporated.
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DMG8880LK3-13Diodes IncorporatedMOSFET N-CH 30V 11A TO252DMG7401SFGQ-7Diodes IncorporatedMOSFET P-CH 30V 9.8A PWRDI3333-8| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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