1N5819-T Tech Spezifikatioune
Diodes Incorporated - 1N5819-T technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Diodes Incorporated - 1N5819-T
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Diodes Incorporated | |
| Voltage - Viru (Vf) (Max) @ Wann | 600 mV @ 1 A | |
| Voltage - DC Reverse (Vr) (Max) | 40 V | |
| Technologie | Schottky | |
| Supplier Device Package | DO-41 | |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | |
| Serie | - | |
| Package / Case | DO-204AL, DO-41, Axial |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Tape & Reel (TR) | |
| Operatiounstemperatur - Junction | -65°C ~ 125°C | |
| Mounting Type | Through Hole | |
| Aktuell - Reverse Leakage @ Vr | 1 mA @ 40 V | |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 1A | |
| Capacitance @ Vr, F. | 110pF @ 4V, 1MHz | |
| Basis Produktnummer | 1N5819 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Diodes Incorporated 1N5819-T.
| Produktiounsattriff |  |
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 |
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|---|---|---|---|---|
| Part Number | 1N5819-T | 1N5819G | 1N5819A-01 | 1N5819-TP |
| Hiersteller | Diodes Incorporated | onsemi | Diodes Incorporated | Micro Commercial Co |
| Voltage - DC Reverse (Vr) (Max) | 40 V | 40 V | - | 40 V |
| Aktuell - Reverse Leakage @ Vr | 1 mA @ 40 V | 1 mA @ 40 V | - | 1 mA @ 40 V |
| Capacitance @ Vr, F. | 110pF @ 4V, 1MHz | - | - | 110pF @ 4V, 1MHz |
| Serie | - | - | - | - |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | - | Fast Recovery =< 500ns, > 200mA (Io) |
| Mounting Type | Through Hole | Through Hole | - | Through Hole |
| Technologie | Schottky | Schottky | - | Schottky |
| Supplier Device Package | DO-41 | Axial | - | DO-41 |
| Aktuell - duerchschnëttlech rektifizéiert (Io) | 1A | 1A | - | 1A |
| Operatiounstemperatur - Junction | -65°C ~ 125°C | -65°C ~ 125°C | - | -55°C ~ 125°C |
| Package / Case | DO-204AL, DO-41, Axial | DO-204AL, DO-41, Axial | - | DO-204AL, DO-41, Axial |
| Basis Produktnummer | 1N5819 | 1N5819 | 1N5819 | 1N5819 |
| Voltage - Viru (Vf) (Max) @ Wann | 600 mV @ 1 A | 600 mV @ 1 A | - | 600 mV @ 1 A |
| Package protegéieren | Tape & Reel (TR) | Bulk | Bulk | Tape & Reel (TR) |
Eroflueden 1N5819-T PDF DataDhusts an Diodes Incorporated Dokumentatioun fir 1N5819-T - Diodes Incorporated.
1N5819GonsemiDIODE SCHOTTKY 40V 1A AXIAL1N5819A-01Diodes IncorporatedDIODE SCHOTTKY DO41
1N5819(TE85R)SS14TAEC Product (Toshiba Electronic Devices and Stora1N5819/SS14TOSHIBA/GC1N5819FLPJ1N5819HSKEFAN1N5819-SOD123
1N5819-FAMI Semiconductor/onsemi1N5819HWSIPUSEMI1N5819(TE85R)TAEC Product (Toshiba Electronic Devices and Stora1N5819-TPMicro Commercial CoDIODE SCHOTTKY 40V 1A DO411N5819-DS14WTOSHIBA/GC1N5819-S4
1N5819-E3/73Vishay General Semiconductor - Diodes DivisionDIODE SCHOTTKY 40V 1A DO204AL
1N5819-E3/23Electro-Films (EFI) / Vishay1N5819AXX1N5819GMicrochip TechnologyDIODE SCHOTTKY 40V 1A DO411N5819-E3/54Vishay General Semiconductor - Diodes DivisionDIODE SCHOTTKY 40V 1A DO204AL| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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