SGW30N60 Tech Spezifikatioune
Infineon Technologies - SGW30N60 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - SGW30N60
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Voltage - Collector Emitter Breakdown (Max) | 600 V | |
| Vce (on) (Max) @ Vge, Ic | 2.4V @ 15V, 30A | |
| Test Condition | 400V, 30A, 11Ohm, 15V | |
| Td (on / off) @ 25 ° C | 44ns/291ns | |
| Energie schalten | 640µJ (on), 650µJ (off) | |
| Supplier Device Package | PG-TO247-3-21 | |
| Serie | - | |
| Power - Max | 250 W | |
| Package / Case | TO-247-3 |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Bulk | |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Type | Standard | |
| IGBT Type | NPT | |
| Gate Charge | 140 nC | |
| Aktuell - Sammler Pulséiert (Icm) | 112 A | |
| Aktuell - Sammler (Ic) (Max) | 41 A | |
| Basis Produktnummer | SGW30N |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies SGW30N60.
| Produktiounsattriff |  |
 |
 |
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|---|---|---|---|---|
| Part Number | SGW30N60 | IXSH24N60 | SGW30N60HS | SGW20N60 |
| Hiersteller | Infineon Technologies | IXYS | Infineon Technologies | Infineon Technologies |
| Test Condition | 400V, 30A, 11Ohm, 15V | 480V, 24A, 10Ohm, 15V | 400V, 30A, 11Ohm, 15V | 400V, 20A, 16Ohm, 15V |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Package protegéieren | Bulk | Tube | Bulk | Bulk |
| Voltage - Collector Emitter Breakdown (Max) | 600 V | 600 V | 600 V | 600 V |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
| Gate Charge | 140 nC | 75 nC | 141 nC | 100 nC |
| Serie | - | HiPerFAST™ | - | - |
| Input Type | Standard | Standard | Standard | Standard |
| Aktuell - Sammler Pulséiert (Icm) | 112 A | 96 A | 112 A | 80 A |
| Energie schalten | 640µJ (on), 650µJ (off) | 2mJ (off) | 1.15mJ | 440µJ (on), 330µJ (off) |
| Vce (on) (Max) @ Vge, Ic | 2.4V @ 15V, 30A | 2.2V @ 15V, 24A | 3.15V @ 15V, 30A | 2.4V @ 15V, 20A |
| Basis Produktnummer | SGW30N | IXSH24 | SGW30N | - |
| Power - Max | 250 W | 150 W | 250 W | 179 W |
| Td (on / off) @ 25 ° C | 44ns/291ns | 100ns/450ns | 20ns/250ns | 36ns/225ns |
| Supplier Device Package | PG-TO247-3-21 | TO-247AD | PG-TO247-3-1 | PG-TO247-3-21 |
| IGBT Type | NPT | PT | NPT | NPT |
| Aktuell - Sammler (Ic) (Max) | 41 A | 48 A | 41 A | 40 A |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
IXSH24N60IXYSIGBT 600V 48A 150W TO247SGW30N60HSInfineon TechnologiesIGBT, 41A, 600V, N-CHANNELSGW23N60UFTMFSCSGW15N120InfineonSGW13N60UFTMFSCSGW20N60Infineon TechnologiesIGBT, 40A I(C), 600V V(BR)CES, N
HGT1S3N60A4DS9AonsemiIGBT 600V 17A 70W D2PAKSGW20N60HSInfineon TechnologiesIGBT, 36A, 600V, N-CHANNELSGW50N60 G50N60Cypress Semiconductor (Infineon Technologies)
STGW75M65DF2STMicroelectronicsTRENCH GATE FIELD-STOP IGBT M SESGW25N120Cypress Semiconductor (Infineon Technologies)
STGB10H60DFSTMicroelectronicsIGBT 600V 20A 115W D2PAKSGW15N60Cypress Semiconductor (Infineon Technologies)STGB30M65DF2STMicroelectronicsIGBT 650V 30A D2PAKSGW5N60RUFTMFSCSGW25N12NOIGBT ModuleSGW50N60HSInfineon TechnologiesIGBT, 100A, 600V, N-CHANNELIXGH36N60B3D1IXYSIGBT 600V 250W TO247AD| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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