IRLI540N Tech Spezifikatioune
Infineon Technologies - IRLI540N technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRLI540N
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 2V @ 250µA | |
Vgs (Max) | ±16V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PG-TO220-FP | |
Serie | HEXFET® | |
Rds On (Max) @ Id, Vgs | 44mOhm @ 12A, 10V | |
Power Dissipation (Max) | 54W (Tc) | |
Package / Case | TO-220-3 Full Pack | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 74 nC @ 5 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4V, 10V | |
Entworf fir Source Voltage (Vdss) | 100 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 23A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRLI540N.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IRLI540N | IRLI520GPBF | IRLI520G | IRLI540GPBF |
Hiersteller | Infineon Technologies | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
Package / Case | TO-220-3 Full Pack | TO-220-3 Full Pack, Isolated Tab | TO-220-3 Full Pack, Isolated Tab | TO-220-3 Full Pack, Isolated Tab |
Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 25 V | 490 pF @ 25 V | 490 pF @ 25 V | 2200 pF @ 25 V |
Gate Charge (Qg) (Max) @ Vgs | 74 nC @ 5 V | 12 nC @ 5 V | 12 nC @ 5 V | 64 nC @ 5 V |
Package protegéieren | Tube | Tube | Tube | Tube |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Vgs (Max) | ±16V | ±10V | ±10V | ±10V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 23A (Tc) | 7.2A (Tc) | 7.2A (Tc) | 17A (Tc) |
FET Feature | - | - | - | - |
Fuert Volt (Max Rds On, Min Rds On) | 4V, 10V | 4V, 5V | 4V, 5V | 4V, 5V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Rds On (Max) @ Id, Vgs | 44mOhm @ 12A, 10V | 270mOhm @ 4.3A, 5V | 270mOhm @ 4.3A, 5V | 77mOhm @ 10A, 5V |
Entworf fir Source Voltage (Vdss) | 100 V | 100 V | 100 V | 100 V |
Power Dissipation (Max) | 54W (Tc) | 37W (Tc) | 37W (Tc) | 48W (Tc) |
Serie | HEXFET® | - | - | - |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Supplier Device Package | PG-TO220-FP | TO-220-3 | TO-220-3 | TO-220-3 |
Vgs (th) (Max) @ Id | 2V @ 250µA | 2V @ 250µA | 2V @ 250µA | 2V @ 250µA |
Eroflueden IRLI540N PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRLI540N - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.