IRL5602SPBF Tech Spezifikatioune
Infineon Technologies - IRL5602SPBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRL5602SPBF
Produktiounsattriff | Attributer Wäert | |
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Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 1V @ 250µA | |
Vgs (Max) | ±8V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | D2PAK | |
Serie | HEXFET® | |
Rds On (Max) @ Id, Vgs | 42mOhm @ 12A, 4.5V | |
Power Dissipation (Max) | 75W (Tc) | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 1460 pF @ 15 V | |
Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 4.5 V | |
FET Typ | P-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
Entworf fir Source Voltage (Vdss) | 20 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 24A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRL5602SPBF.
Produktiounsattriff | ||||
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Part Number | IRL5602SPBF | IRL5602STRR | IRL540NSPBF | IRL5602S |
Hiersteller | Infineon Technologies | Infineon Technologies | International Rectifier | Infineon Technologies |
Supplier Device Package | D2PAK | D2PAK | D2PAK | D2PAK |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 4.5V | 2.5V, 4.5V | 4V, 10V | 2.5V, 4.5V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 24A (Tc) | 24A (Tc) | 36A (Tc) | 24A (Tc) |
Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 4.5 V | 44 nC @ 4.5 V | 74 nC @ 5 V | 44 nC @ 4.5 V |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Input Capacitance (Ciss) (Max) @ Vds | 1460 pF @ 15 V | 1460 pF @ 15 V | 1800 pF @ 25 V | 1460 pF @ 15 V |
Entworf fir Source Voltage (Vdss) | 20 V | 20 V | 100 V | 20 V |
FET Feature | - | - | - | - |
Vgs (th) (Max) @ Id | 1V @ 250µA | 1V @ 250µA | 2V @ 250µA | 1V @ 250µA |
Vgs (Max) | ±8V | ±8V | ±16V | ±8V |
Power Dissipation (Max) | 75W (Tc) | 75W (Tc) | 3.8W (Ta), 140W (Tc) | 75W (Tc) |
Rds On (Max) @ Id, Vgs | 42mOhm @ 12A, 4.5V | 42mOhm @ 12A, 4.5V | 44mOhm @ 18A, 10V | 42mOhm @ 12A, 4.5V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Package protegéieren | Tube | Tape & Reel (TR) | Bulk | Tube |
FET Typ | P-Channel | P-Channel | N-Channel | P-Channel |
Serie | HEXFET® | HEXFET® | HEXFET® | HEXFET® |
Eroflueden IRL5602SPBF PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRL5602SPBF - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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