IRFU3504ZPBF Tech Spezifikatioune
Infineon Technologies - IRFU3504ZPBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRFU3504ZPBF
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | IPAK (TO-251AA) | |
Serie | HEXFET® | |
Rds On (Max) @ Id, Vgs | 9mOhm @ 42A, 10V | |
Power Dissipation (Max) | 90W (Tc) | |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 1510 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 40 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 42A (Tc) |
ATTRESSIOUN | BESCHREIWUNG |
---|---|
RoHs Status | |
Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
Erreecht Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS |
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Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IRFU3504ZPBF | IRFU3704 | IRFU3607PBF | IRFU3504Z |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V | 19 nC @ 4.5 V | 84 nC @ 10 V | 45 nC @ 10 V |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
FET Feature | - | - | - | - |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Input Capacitance (Ciss) (Max) @ Vds | 1510 pF @ 25 V | 1996 pF @ 10 V | 3070 pF @ 50 V | 1510 pF @ 25 V |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA | TO-251-3 Short Leads, IPak, TO-251AA |
Package protegéieren | Tube | Tube | Tube | Tube |
Supplier Device Package | IPAK (TO-251AA) | IPAK (TO-251AA) | IPAK (TO-251AA) | IPAK (TO-251AA) |
Power Dissipation (Max) | 90W (Tc) | 90W (Tc) | 140W (Tc) | 90W (Tc) |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Vgs (th) (Max) @ Id | 4V @ 250µA | 3V @ 250µA | 4V @ 100µA | 4V @ 50µA |
Entworf fir Source Voltage (Vdss) | 40 V | 20 V | 75 V | 40 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 42A (Tc) | 75A (Tc) | 56A (Tc) | 42A (Tc) |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Rds On (Max) @ Id, Vgs | 9mOhm @ 42A, 10V | 9.5mOhm @ 15A, 10V | 9mOhm @ 46A, 10V | 9mOhm @ 42A, 10V |
Serie | HEXFET® | HEXFET® | HEXFET® | HEXFET® |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Eroflueden IRFU3504ZPBF PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRFU3504ZPBF - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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