IRF9Z24NSTRR Tech Spezifikatioune
Infineon Technologies - IRF9Z24NSTRR technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRF9Z24NSTRR
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | D2PAK | |
Serie | HEXFET® | |
Rds On (Max) @ Id, Vgs | 175mOhm @ 7.2A, 10V | |
Power Dissipation (Max) | 3.8W (Ta), 45W (Tc) | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V | |
FET Typ | P-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 55 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 12A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRF9Z24NSTRR.
Produktiounsattriff | ||||
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Part Number | IRF9Z24NSTRR | IRF9Z30 | IRF9Z24PBF | IRF9Z24STRRPBF |
Hiersteller | Infineon Technologies | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
FET Typ | P-Channel | P-Channel | P-Channel | P-Channel |
Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V | 39 nC @ 10 V | 19 nC @ 10 V | 19 nC @ 10 V |
FET Feature | - | - | - | - |
Entworf fir Source Voltage (Vdss) | 55 V | 50 V | 60 V | 60 V |
Power Dissipation (Max) | 3.8W (Ta), 45W (Tc) | 74W (Tc) | 60W (Tc) | 3.7W (Ta), 60W (Tc) |
Package protegéieren | Tape & Reel (TR) | Tube | Tube | Tape & Reel (TR) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 12A (Tc) | 18A (Tc) | 11A (Tc) | 11A (Tc) |
Serie | HEXFET® | - | - | - |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Rds On (Max) @ Id, Vgs | 175mOhm @ 7.2A, 10V | 140mOhm @ 9.3A, 10V | 280mOhm @ 6.6A, 10V | 280mOhm @ 6.6A, 10V |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-220-3 | TO-220-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
Supplier Device Package | D2PAK | TO-220AB | TO-220AB | D²PAK (TO-263) |
Input Capacitance (Ciss) (Max) @ Vds | 350 pF @ 25 V | 900 pF @ 25 V | 570 pF @ 25 V | 570 pF @ 25 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Mounting Type | Surface Mount | Through Hole | Through Hole | Surface Mount |
Eroflueden IRF9Z24NSTRR PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRF9Z24NSTRR - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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