IRF9388TRPBF Tech Spezifikatioune
Infineon Technologies - IRF9388TRPBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRF9388TRPBF
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 2.4V @ 25µA | |
Vgs (Max) | ±25V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | 8-SO | |
Serie | HEXFET® | |
Rds On (Max) @ Id, Vgs | 8.5mOhm @ 12A, 20V | |
Power Dissipation (Max) | 2.5W (Ta) | |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 1680 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 10 V | |
FET Typ | P-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V, 20V | |
Entworf fir Source Voltage (Vdss) | 30 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 12A (Ta) | |
Basis Produktnummer | IRF9388 |
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Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IRF9388TRPBF | IRF9392TRPBF | IRF9392PBF | IRF9383MTRPBF |
Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
FET Feature | - | - | - | - |
Input Capacitance (Ciss) (Max) @ Vds | 1680 pF @ 25 V | 1270 pF @ 25 V | 1270 pF @ 25 V | 7305 pF @ 15 V |
Basis Produktnummer | IRF9388 | - | IRF9392 | IRF9383 |
Vgs (th) (Max) @ Id | 2.4V @ 25µA | 2.4V @ 25µA | 2.4V @ 25µA | 2.4V @ 150µA |
Serie | HEXFET® | HEXFET® | HEXFET® | HEXFET® |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tube | Tape & Reel (TR) |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | DirectFET™ Isometric MX |
Entworf fir Source Voltage (Vdss) | 30 V | 30 V | 30 V | 30 V |
Power Dissipation (Max) | 2.5W (Ta) | 2.5W (Ta) | 2.5W (Ta) | 2.1W (Ta), 113W (Tc) |
Gate Charge (Qg) (Max) @ Vgs | 52 nC @ 10 V | 14 nC @ 4.5 V | 14 nC @ 4.5 V | 130 nC @ 10 V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
FET Typ | P-Channel | P-Channel | P-Channel | P-Channel |
Vgs (Max) | ±25V | ±25V | ±25V | ±20V |
Fuert Volt (Max Rds On, Min Rds On) | 10V, 20V | 10V, 20V | 10V, 20V | 4.5V, 10V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Rds On (Max) @ Id, Vgs | 8.5mOhm @ 12A, 20V | 12.1mOhm @ 7.8A, 20V | 12.1mOhm @ 7.8A, 20V | 2.9mOhm @ 22A, 10V |
Supplier Device Package | 8-SO | 8-SO | 8-SO | DIRECTFET™ MX |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 12A (Ta) | 9.8A (Ta) | 9.8A (Ta) | 22A (Ta), 160A (Tc) |
Eroflueden IRF9388TRPBF PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRF9388TRPBF - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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