IRF7480MTRPBF Tech Spezifikatioune
Infineon Technologies - IRF7480MTRPBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRF7480MTRPBF
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 3.9V @ 150µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | DirectFET™ Isometric ME | |
Serie | HEXFET®, StrongIRFET™ | |
Rds On (Max) @ Id, Vgs | 1.2mOhm @ 132A, 10V | |
Power Dissipation (Max) | 96W (Tc) | |
Package / Case | DirectFET™ Isometric ME | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 6680 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 185 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 6V, 10V | |
Entworf fir Source Voltage (Vdss) | 40 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 217A (Tc) | |
Basis Produktnummer | IRF7480 |
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Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IRF7480MTRPBF | IRF7488TRPBF | IRF7477TR | IRF7478TRPBF |
Hiersteller | Infineon Technologies | International Rectifier | Infineon Technologies | Infineon Technologies |
Vgs (th) (Max) @ Id | 3.9V @ 150µA | 4V @ 250µA | 2.5V @ 250µA | 3V @ 250µA |
Basis Produktnummer | IRF7480 | - | - | - |
Power Dissipation (Max) | 96W (Tc) | 2.5W (Ta) | 2.5W (Ta) | 2.5W (Ta) |
Package / Case | DirectFET™ Isometric ME | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
FET Feature | - | - | - | - |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 217A (Tc) | 6.3A (Ta) | 14A (Ta) | 7A (Ta) |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Package protegéieren | Tape & Reel (TR) | Bulk | Tape & Reel (TR) | Tape & Reel (TR) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Entworf fir Source Voltage (Vdss) | 40 V | 80 V | 30 V | 60 V |
Supplier Device Package | DirectFET™ Isometric ME | 8-SO | 8-SO | 8-SO |
Gate Charge (Qg) (Max) @ Vgs | 185 nC @ 10 V | 57 nC @ 10 V | 38 nC @ 4.5 V | 31 nC @ 4.5 V |
Input Capacitance (Ciss) (Max) @ Vds | 6680 pF @ 25 V | 1680 pF @ 25 V | 2710 pF @ 15 V | 1740 pF @ 25 V |
Rds On (Max) @ Id, Vgs | 1.2mOhm @ 132A, 10V | 29mOhm @ 3.8A, 10V | 8.5mOhm @ 14A, 10V | 26mOhm @ 4.2A, 10V |
Fuert Volt (Max Rds On, Min Rds On) | 6V, 10V | 10V | 4.5V, 10V | 4.5V, 10V |
Serie | HEXFET®, StrongIRFET™ | HEXFET® | HEXFET® | HEXFET® |
Eroflueden IRF7480MTRPBF PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRF7480MTRPBF - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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