IRF7353D2TRPBF Tech Spezifikatioune
Infineon Technologies - IRF7353D2TRPBF technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRF7353D2TRPBF
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Infineon Technologies | |
| Vgs (th) (Max) @ Id | 1V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 8-SO | |
| Serie | FETKY™ | |
| Rds On (Max) @ Id, Vgs | 29mOhm @ 5.8A, 10V | |
| Power Dissipation (Max) | 2W (Ta) | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 650 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | Schottky Diode (Isolated) | |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 30 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6.5A (Ta) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRF7353D2TRPBF.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | IRF7353D2TRPBF | IRF7353D1TRPBF | IRF7353D2 | IRF7353D2TR |
| Hiersteller | Infineon Technologies | Infineon Technologies | Infineon Technologies | IR |
| Vgs (th) (Max) @ Id | 1V @ 250µA | 1V @ 250µA | 1V @ 250µA | - |
| Supplier Device Package | 8-SO | 8-SO | 8-SO | - |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | - |
| Entworf fir Source Voltage (Vdss) | 30 V | 30 V | 30 V | - |
| Serie | FETKY™ | FETKY™ | FETKY™ | - |
| Vgs (Max) | ±20V | ±20V | ±20V | - |
| Rds On (Max) @ Id, Vgs | 29mOhm @ 5.8A, 10V | 32mOhm @ 5.8A, 10V | 29mOhm @ 5.8A, 10V | - |
| Power Dissipation (Max) | 2W (Ta) | 2W (Ta) | 2W (Ta) | - |
| FET Feature | Schottky Diode (Isolated) | Schottky Diode (Isolated) | Schottky Diode (Isolated) | - |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | - |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | - |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tube | - |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 10 V | 33 nC @ 10 V | 33 nC @ 10 V | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - |
| FET Typ | N-Channel | N-Channel | N-Channel | - |
| Input Capacitance (Ciss) (Max) @ Vds | 650 pF @ 25 V | 650 pF @ 25 V | 650 pF @ 25 V | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6.5A (Ta) | 6.5A (Ta) | 6.5A (Ta) | - |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | - |
Eroflueden IRF7353D2TRPBF PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRF7353D2TRPBF - Infineon Technologies.
IRF7353D2TRIRIRF7353D1TRPBFInfineon TechnologiesMOSFET N-CH 30V 6.5A 8SOIRF7353D2TRPBF MOSIRIRF7379PBFInfineon TechnologiesMOSFET N/P-CH 30V 8-SOICIRF7353D1TRPBF.IRIRF7353D1TRPBF MOSIRIRF7379ITRPBFVBSEMIIRF7379Infineon TechnologiesMOSFET N/P-CH 30V 8-SOICIRF7353D2QTRPBF.IRIRF7353TRPBFIRIRF7353D1TR MOSIRFIRF7353TRIRIRF7353D2QTRPBFIRIRF7379 MOSIRIRF7353TRPBF.IRIRF7353D2TR MOSIRIRF7353D2TRPBF.IRIRF7353D2Infineon TechnologiesMOSFET N-CH 30V 6.5A 8SO| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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