IRF3205ZS Tech Spezifikatioune
Infineon Technologies - IRF3205ZS technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Infineon Technologies - IRF3205ZS
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Infineon Technologies | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | D2PAK | |
Serie | HEXFET® | |
Rds On (Max) @ Id, Vgs | 6.5mOhm @ 66A, 10V | |
Power Dissipation (Max) | 170W (Tc) | |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 3450 pF @ 25 V | |
Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 55 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 75A (Tc) |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Infineon Technologies IRF3205ZS.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | IRF3205ZS | IRF3205ZLPBF | IRF3205ZSTRL | IRF3205STRRPBF |
Hiersteller | Infineon Technologies | Infineon Technologies | Vishay Siliconix | Infineon Technologies |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V | 110 nC @ 10 V | 110 nC @ 10 V | 146 nC @ 10 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 75A (Tc) | 75A (Tc) | 75A (Tc) | 110A (Tc) |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Power Dissipation (Max) | 170W (Tc) | 170W (Tc) | 170W (Tc) | 200W (Tc) |
Package protegéieren | Tube | Tube | Tape & Reel (TR) | Tape & Reel (TR) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-262-3 Long Leads, I²Pak, TO-262AA | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Entworf fir Source Voltage (Vdss) | 55 V | 55 V | 55 V | 55 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
FET Feature | - | - | - | - |
Mounting Type | Surface Mount | Through Hole | Surface Mount | Surface Mount |
Serie | HEXFET® | HEXFET® | - | HEXFET® |
Rds On (Max) @ Id, Vgs | 6.5mOhm @ 66A, 10V | 6.5mOhm @ 66A, 10V | 6.5mOhm @ 66A, 10V | 8mOhm @ 62A, 10V |
Supplier Device Package | D2PAK | TO-262 | D²PAK (TO-263) | D2PAK |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Input Capacitance (Ciss) (Max) @ Vds | 3450 pF @ 25 V | 3450 pF @ 25 V | 3450 pF @ 25 V | 3247 pF @ 25 V |
Eroflueden IRF3205ZS PDF DataDhusts an Infineon Technologies Dokumentatioun fir IRF3205ZS - Infineon Technologies.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.